Wszystkie pola: Sznajder, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Structure and Charge Compensation of Heteropolar SiC/GaN Interfaces
Autorzy:: Sznajder, M.
Majewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1399077.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.-p
68.35.Ct
68.47.Fg
68.65.-k
Opis:: We present studies of the morphology and charge distribution at the 4H-SiC/wz-GaN heteropolar junctions. Our investigations are based on the first principles calculations in the framework of the density functional theory where the interfaces between the SiC substrate and GaN layers are represented by means of a slab. These studies reveal possible charge compensation patterns at the interfaces that lead to charge redistribution from monopole to dipole character and increase the stability of the junctions. It turns out that the interfaces with C-Ga and Si-Ga bonds across the junction and reconstructions involving substitution of group IV elements into Ga layer are the most favorable energetically.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 772-774
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Morphology and stability of the C/BN interfaces: Ab initio studies
Autorzy:: Grabowski, M.
Sznajder, M.
Majewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1160502.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.-p
68.35.Ct
68.65.Cd
Opis:: We investigate the morphology and charge distribution at the (001)-diamond/BN heteropolar junctions of the cubic materials. Our investigations are based on the first principles calculations in the framework of the density functional theory. These studies reveal that reconstruction of the interface leads to possible charge compensation at the interface and increases also the stability of the junction in comparison to the abrupt interfaces.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-138-A-141
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Resonant Plasmon Response of a Periodically Modulated Two-Dimensional Electron Gas
Autorzy:: Sznajder, P.
Piętka, B.
Szczytko, J.
Łusakowski, J.
Bardyszewski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1409611.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 52.25.Mq
52.40.Db
73.20.-r
71.10.Ca
73.20.Mf
Opis:: We report the theoretical study of the optical response of a periodically modulated two-dimensional electron gas. The density of states is calculated within the first order of the perturbation theory and the effects of the short-range disorder are explained and discussed. We demonstrate that the magnetic field values corresponding to the characteristic narrowing of the density of states width are given by the zeros of the subsequent Laguerre polynomials. The observed increase of the density of states at the edges are interpreted as van Hove singularities. The broadening effects are shown to modify and smear out the observed effects with increasing temperature above 2 K. The plasmon dispersion relation is discussed in terms of the random phase approximation. Small changes in plasmon dispersion relation related to the periodic modulation were predicted.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1090-1092
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Morphology and Stability of the Diamond/BN (001) and (111) Interfaces Based on Ab Initio Studies
Autorzy:: Sznajder, M.
Hrushka, N.
Majewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1185499.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.-p
68.35.Ct
68.65.Cd
Opis:: The morphology, charge distribution and energetic stability of interfaces in the diamond/c-BN heteropolar junctions grown along [001] and [111] crystallographic directions are obtained from first principles calculations in the framework of density functional theory. It turns out that there exist reconstructions of the abrupt interfaces of the C and N adjacent layers (C-N type) that induce charge compensation and lead to the stabilization of the interfaces. On the contrary, our studies strongly suggest that analogous reconstructions of the abrupt interfaces of C and B adjacent layers (C-B type) are not energetically favorable and do not stabilize abrupt interfaces.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1220-1223
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Ab Initio Studies of Al and Ga Adsorption on 4H-SiC{0001} Surfaces
Autorzy:: Wachowicz, E.
Sznajder, M.
Majewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1403647.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.47.Fg
68.35.bg
68.43.Bc
68.43.Fg
Opis:: Changes in the atomic and electronic structure of Si- and C-terminated 4H-SiC{0001} surfaces resulting from aluminium and gallium adsorption have been studied within density functional theory framework. Al and Ga coverages ranging from a submonolayer to one monolayer were considered. Our results show that Al binds more strongly to both surfaces than Ga. The binding is stronger to the C-terminated surface for both metals. The sites occupied by Al and Ga atoms at 1 monolayer are different and it is due to a different charge transfer from metal to the substrate.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1045-1048
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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