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Wyświetlanie 1-15 z 26
Tytuł:
Hall Effect in $GdB_{6}$
Autorzy:
Anisimov, M.
Bogach, A.
Glushkov, V.
Demishev, S.
Samarin, N.
Shitsevalova, N.
Levchenko, A.
Filippov, V.
Kuznetsov, A.
Flachbart, K.
Sluchanko, N.
Powiązania:
https://bibliotekanauki.pl/articles/1371548.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Gd
Opis:
The Hall effect of $GdB_{6}$ has been studied on high quality single crystals in the temperature range 2-150 K and in magnetic field of 1 T. The obtained data allow to detect anomalies in the antiferromagnetic (AF) phase including (i) a drastic enhancement of negative Hall coefficient below $T_{N1}$ ≈ 15.5 K and (ii) the appearance of an anomalous Hall effect at $T_{N2}$ ≈ 4.7 K. Possible scenarios of the AF ground state formation are discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 348-349
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hall Effect in ZnO Extrinsic Structure
Autorzy:
Dolník, B.
Kurimský, J.
Marton, K.
Kolcun, M.
Tomčo, L.
Briančin, J.
Fabián, M.
Halama, M.
Vojtko, M.
Rajňák, M.
Powiązania:
https://bibliotekanauki.pl/articles/1200027.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Dq
72.20.My
84.32.Ff
84.37.+q
81.05.Xj
72.80.Ng
Opis:
Zinc oxide-based extrinsic composite was investigated. The sample was selected from a series of components of one production batch, prepared by standard sintering technology. The content of extrinsic elements in ZnO base was determined by SEM. Van der Pauw method with four-point electrode fixture was used for study of conducting phenomena in square-shaped sample. It is normaly preferred to assume the symmetric uniformity of the electrical properties of sample, for which sheet resistance, bulk resistivity and Hall mobility, sheet carrier density and carrier concentration can be calculated. When the uniformity of measured parameters is breached, the anisotropy in the arrangement of the internal structure may be the cause. There remains the question of whether the extrinsic ZnO material can be isotropic, regarding the electrical conductivity. Although the Hall effect has been measured, preliminary measurements indicate the presence of anisotropy in the measured samples. Before measurement the following phenomena should be taken into account: magneto-electric effect, photo-electric effect and the isothermal condition should be preserved. Paper discusses the uniformity deviations for the defined setup configurations for positive and negative magnetic field directions. Bulk resistivity has been calculated by numerical solution of van der Pauw equation. Large offset voltage during the measurement is discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 76-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Breakdown of the Quantum Hall Effect
Autorzy:
Maude, D. K.
Rigal, L. B.
Desrat, W.
Potemski, M.
Portal, J. C.
Eaves, L.
Wasilewski, Z. R.
Toropov, A. I.
Hill, G.
Powiązania:
https://bibliotekanauki.pl/articles/2027467.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Pm
74.25.Dw
Opis:
The breakdown of the dissipationless conductance in the integer and fractional quantum Hall effect regime is reviewed. The temperature dependence of the critical current and of the critical magnetic field at breakdown bears a striking resemblance to the phase diagram of the phenomenological two-fluid Gorter-Casimir model for superconductivity. In addition, a remarkably simple scaling law exists between different filling factors.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 213-226
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in IV-VI Semiconductors
Autorzy:
Dyrdał, A.
Dugaev, V.
Barnaś, J.
Brodowska, B.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1810533.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
75.50.Pp
72.25.Dc
Opis:
We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 287-289
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composite Fermions and the Fractional Quantum Hall Effect
Autorzy:
Wójs, A.
Quinn, J. J.
Powiązania:
https://bibliotekanauki.pl/articles/2011133.pdf
Data publikacji:
1999-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Pm
73.20.Dx
73.40.Hm
Opis:
The mean field composite fermion picture successfully predicts low lying states of fractional quantum Hall systems. This success cannot be attributed to a cancellation between the Coulomb and Chern-Simons interactions beyond the mean field and solely depends on the short-range of the Coulomb pseudopotential in the lowest Landau level. The class of pseudopotentials for which the mean field composite fermion picture can be applied is defined. The success or failure of the mean field composite fermion picture in various systems (electrons in excited Landau levels, Laughlin quasiparticles, charged magnetoexcitons) is explained.
Źródło:
Acta Physica Polonica A; 1999, 96, 5; 593-602
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Behavior of the Hall Effect in III-V Heterostructures
Autorzy:
Dziuba, Z.
Górska, M.
Marczewski, J.
Przesławski, T.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2012953.pdf
Data publikacji:
2000-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
72.80.Ey
Opis:
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
Źródło:
Acta Physica Polonica A; 2000, 97, 2; 331-336
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
Autorzy:
Wesela, W.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047701.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
85.75.-d
Opis:
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Spin Hall Effect in Strained (111)-Oriented SnSe Layers
Autorzy:
Safaei, S.
Galicka, M.
Kacman, P.
Buczko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1398549.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.jd
71.20.-b
73.20.-r
Opis:
Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillat ory fashion on the layer thickness - the calculated topological invariant indexes and edge state spin polarizations show that for films 20-40 monolayers thick a two-dimensional topological insulator phase appears. Edge states with the Dirac cones with opposite spin polarization in their two branches are obtained for both materials. However, for all but the (111)-oriented SnTe films with an even number of monolayers an overlapping of bands in Γ̅ and M̅ diminishes the final band gap and the edge states appear either against the background of the bands or within a very small energy gap. Here we show that this problem in SnSe films can be removed by applying an appropriate strain. This should enable observation of the quantum spin Hall effect also in SnSe layers.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-150-A-152
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Method of Offset Voltage Minimization in Hall-Effect Sensor
Autorzy:
Petruk, O.
Kachniarz, M.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032752.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
02.70.Dh
Opis:
The paper presents numerical model and validation of new methodology of offset voltage minimization in the Hall-effect sensors. Model of the Hall-effect sensor with multiple electric pins was developed. Mathematical equations used for calculation of electric potential difference were formulated. Simulations were carried out using finite elements method in ELMER FEM software. Performed investigation of actual parameters of newly designed Hall-effect sensor confirms effectiveness of the described method.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1177-1179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
Autorzy:
Kachniarz, M.
Petruk, O.
Salach, J.
Ciuk, T.
Strupiński, W.
Bieńkowski, A.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1030244.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
81.05.ue
73.22.Pr
72.80.Vp
Opis:
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1250-1253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Spin Hall Effect in k-Cubed Rashba Model
Autorzy:
Krzyżewska, A.
Dyrdał, A.
Berakdar, J.
Powiązania:
https://bibliotekanauki.pl/articles/1030432.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Tj
72.25.-b
72.25.Mk
73.40.-c
Opis:
Within the Matsubara Green function formalism and linear response theory we considered theoretically the temperature dependences of the spin Hall effect for a two-dimensional gas with an isotropic k-cubed form of the Rashba interaction. We utilize a standard model for treating spin-orbit phenomena in p-doped semiconductor heterostructures and also for an electron gas formed at perovskite oxides interfaces.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 558-560
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jack Polynomials and Fractional Quantum Hall Effect at ν = 1/3
Autorzy:
Kuśmierz, B.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398638.pdf
Data publikacji:
2016-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
71.10.Pm
Opis:
We investigate properties of strongly correlated, spinless electrons confined within given Landau level at filling factor ν = 1/3. Our analysis is based on the formalism of the Jack polynomials. Selected Jack polynomial wave functions are compared with ground states of the Coulomb interaction Hamiltonians, in different materials and the Landau levels, obtained by exact diagonalization. We show that certain Jack wave functions can be used as a description of fractional quantum Hall states.
Źródło:
Acta Physica Polonica A; 2016, 130, 2; 607-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
Autorzy:
Grabecki, G.
Takeyama, S.
Dietl, T.
Takamasu, T.
Shimamotο, Y.
Miura, N.
Powiązania:
https://bibliotekanauki.pl/articles/1933749.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Hc
73.50.Fq
73.20.Dx
73.40.Lq
Opis:
Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 731-734
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Disorder on Spin and Charge Excitations in the Fractional Quantum Hall Effect
Autorzy:
Výborný, K.
Müller, Ch.
Dethlefsen, A. F.
Haug, R. J.
Wójs, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047400.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.-f
75.10.Jm
72.10.Fk
73.63.-b
Opis:
A simple model of disorder in fractional quantum Hall systems is combined with the standard exact diagonalisation technique. Electron-density-dependent gaps at filling factors 1/3,2/3,2/5, and 3/5 measured by activated transport can then be fitted with a single reasonable value of d which has the meaning of the separation of ionized donors from the quasi-2D electron gas.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 249-254
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Domukhovski, V.
Brodowska, B.
Reszka, A.
Kowalski, B.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376191.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
72.80.Ga
75.40.Mg
75.50.Pp
Opis:
The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1180-1183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 26

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