Temat: ultrathin layers - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On the ordering of n-cyanobiphenyl mesogene molecules on graphene - a computer simulation study
Autorzy:: Gwizdała, Wojciech
Raczyńska, Violetta
Raczyński, Przemysław
Górny, Krzysztof
Dendzik, Zbigniew
Powiązania:: https://bibliotekanauki.pl/articles/1955285.pdf
Data publikacji:: 2018
Wydawca:: Politechnika Gdańska
Tematy:: order parameter
liquid crystals
graphene
ultrathin layers
Opis:: We studied ultrathin layers of n-cyanobiphenyl (n=5,6,7,8) mesogene molecules forming thin films on a graphene plane using molecular dynamics simulations in a wide temperature range (220–420K). Each modeled ensemble was heated to the maximum temperature and then cooled (reverse procedure). We calculated the second rank order parameter as a measure of the molecular order of mesogene molecules and we discuss the distribution of angles between them and the global sample director.
Źródło:: TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2018, 22, 2; 105-111
1428-6394
Pojawia się w:: TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Ultrathin oxynitride films for CMOS technology
Autorzy:: Beck, R.B.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308025.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOS technology
gate stack
ultrathin oxynitride layers
high temperature processing
plasma processing
Opis:: In this work, a review of possible methods of oxynitride film formation will be given. These are different combinations of methods applying high-temperature oxidation and nitridation, as well as ion implantation and deposition techniques. The layers obtained using these methods differ, among other aspects in: nitrogen content, its profile across the ultrathin layer,... etc., which have considerable impact on device properties, such as leakage current, channel mobility, device stability and its reliability. Unlike high-temperature processes, which (understood as a single process step) usually do not allow the control of the nitrogen content at the silicon-oxynitride layer interface, different types of deposition techniques allow certain freedom in this respect. However, deposition techniques have been believed for many years not to be suitable for such a responsible task as the formation of gate dielectrics in MOS devices. Nowadays, this belief seems unjustified. On the contrary, these methods often allow the formation of the layers not only with a uniquely high content of nitrogen but also a very unusual nitrogen profile, both at exceptionally low temperatures. This advantage is invaluable in the times of tight restrictions imposed on the thermal budget (especially for high performance devices). Certain specific features of these methods also allow unique solutions in certain technologies (leading to simplifications of the manufacturing process and/or higher performance and reliability), such as dual gate technology for system-on-chip (SOC) manufacturing.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 62-69
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Impurity-concentration dependence of seebeck coefficient in silicon-on-insulator layers
Autorzy:: Salleh, F.
Asai, K.
Ishida, A.
Ikeda, H.
Powiązania:: https://bibliotekanauki.pl/articles/385169.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: Seebeck coefficient
ultrathin silicon-on-Insulator layers
nanostructure
impurity band
Opis:: We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses of 6-100 nm. The dependence of the coefficient on the impurity concentration was investigated, and was shown to be in good agreement with that of bulk Si. In addition, it was found to decrease with increasing impurity concentration, as is usual in semiconductor materials. However, for doping levels above 3.5x1019 cm-3, the Seebeck coefficient was observed to increase. This is likely to be due to the influence of an impurity band.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 134-136
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: Challenges in ultrathin oxide layers formation
Autorzy:: Beck, R.B.
Jakubowski, A.
Łukasiak, L.
Korwin-Pawłowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/307646.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon technology
oxidation
PECVD
RTO
gate oxide
ultrathin
layers
Opis:: In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 27-34
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "ultrathin layers" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język