Autor: Rangelow, I.W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of scanning shear-force microscope for fabrication of nanostructures
Autorzy:: Sikora, A.
Gotszalk, T.
Sankowska, A.
Rangelow, I. W.
Powiązania:: https://bibliotekanauki.pl/articles/308832.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: AFM
nanostructures fabrication
shear force microscopy
Opis:: In view of the rapid growth of interest in AFM technique in surface property investigation and local surface modification we describe here an AFM microscope with optical tip oscillation detection. The modular shear-force/tunneling microscope for surface topography measurement and nanoanodisation is described. The measurement instrument presented here is based on the fiber Fabry-Perot interferometer for the measurement of the conductive microtip oscillation that is used as nano e-beam for local surface anodisation. An advantage of this system is that quantitative measurements of tip vibration amplitude are easily performed.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 81-84
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Adsorption properties of porous silicon
Autorzy:: Domański, K.
Grabiec, P.
Gotszalk, T.
Beck, R.B.
Dębski, T.
Rangelow, I.W.
Powiązania:: https://bibliotekanauki.pl/articles/308412.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: porous silicon
cantilever beam
gas sensor
Opis:: Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive device is given by micromechanical structure. In this paper we report on the piezoresistive cantilever beam structure with porous silicon adsorbing spot as a gas sensor.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 53-56
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Piezoresistive sensors for atomic force microscopy - numerical simulations by means of virtual wafer fab
Autorzy:: Dębski, T.
Barth, W.
Rangelow, I.W.
Domański, K.
Tomaszewski, D.
Grabiec, P.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/307644.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: atomic force microscopy (AFM)
piezoresistive sensors
technology simulation
technology characterization
Opis:: An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 35-39
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Diagnostics of micro- and nanostructure using the scanning probe microscopy
Autorzy:: Gotszalk, T.
Janusz, P.
Marendziak, A.
Czarnecki, P.
Radojewski, J.
Szeloch, R. F.
Grabiec, P.
Rangelow, I. W.
Powiązania:: https://bibliotekanauki.pl/articles/308801.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: scannig probe microscopy
microsystem
nanofabrication
Opis:: In this paper we summarize the results of our research concerning the diagnostics of micro- and nanostructure with scanning probe microscopy (SPM). We describe the experiments performed with one of the scanning probe microscopy techniques enabling also insulating surfaces to be investigated, i.e., atomic force microscopy (AFM). We present the results of topography measurements using both contact and non-contact AFM modes, investigations of the friction forces that appear between the microtip and the surface, and experiments connected with the thermal behaviour of integrated circuits, carried out with the local resolution of 20 nm.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 41-46
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Fabrication and properties of the field emission array with self-alignment gate electrode
Autorzy:: Barth, W.
Dębski, T.
Rangelow, I.W.
Grabiec, P.
Studzińska, K.
Zaborowski, M.
Mitura, S.
Biehl, S.
Hudek, P.
Kostic, I.
Powiązania:: https://bibliotekanauki.pl/articles/308414.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: field-emission array
field emission display
diamond-like-carbon layers emission
silicon micromachining
self-alignment technology
Opis:: A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 49-52
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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