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Wyświetlanie 1-15 z 39
Tytuł:
Valence Band Electronic Structure of HgMSe (M=Mn, Fe, Co)
Autorzy:
Guziewicz, A.
Kowalski, B. J.
Orłowski, B. A.
Ghijsen, J.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1931745.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Eq
71.20.Fi
Opis:
The synchrotron radiation in the energy range between 40 and 80 eV was applied to investigate the electronic structure of Hg$\text{}_{0.7}$Mn$\text{}_{0.3}$Se, Hg$\text{}_{0.88}$Fe$\text{}_{0.12}$Se and Hg$\text{}_{0.93}$Co$\text{}_{0.07}$Se crystals by means of the resonant photoemission spectroscopy. The set of energy distribution curves was measured in the region near the M (M = Mn 3d$\text{}^{5}$, Fe 3d$\text{}^{6}$, Co 3d$\text{}^{7}$) 3p-3d transitions. In order to determine thoroughly the Fano type resonance energy the constant initial states curves were measured.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 817-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Photoemission Spectra of Zn$\text{}_{1-x}$Co$\text{}_{x}$S Valence Band
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, A.
Orłowski, B. A.
Mašek, J.
Ghijsen, J.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1931761.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Fi
Opis:
We report the results of a resonant photoemission study of Zn$\text{}_{1-x}$Co$\text{}_{x}$S. A Co 3d derived contribution to the valence band spectra was revealed as a 5 eV wide structure with two maxima: at the edge of the valence band and about 4 eV below the edge. The results were compared with the total DOS distribution resulting from tight binding-coherent potential approximation calculations.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 831-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923915.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 857-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Study of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931782.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
The reflectivity spectra of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:
Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1992049.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Nr
Opis:
The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 454-458
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition
Autorzy:
Łukasiewicz, M.
Cabaj, A.
Godlewski, M.
Guziewicz, E.
Wittlin, A.
Jaworski, M.
Wołoś, A.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1492931.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 911-913
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Veresegyhazy, R.
Mojzes, I.
Pecz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891383.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
Autorzy:
Demchenko, I.
Melikhov, Y.
Konstantynov, P.
Ratajczak, R.
Barcz, A.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1030972.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
74.25.Jb
33.60.+q
Opis:
The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 907-909
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Absorption Fine Structure Investigation of the Low Temperature Grown ZnCoO Films
Autorzy:
Wolska, A.
Klepka, M.
Witkowski, B.
Witkowski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431568.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
68.55.-a
Opis:
ZnO based diluted magnetic semiconductors are intensively investigated for possible spintronic applications. In the present work we investigate the ZnCoO layers grown at low temperature by atomic layer deposition. The local atomic structure of a series of layers with different Co concentration is investigated by the X-ray absorption fine structure measurements. Two groups of ZnCoO layers are investigated - the ones with an uniform Co distribution and highly nonuniform films. For uniform samples we observe that a majority of Co atoms is built into the ZnO matrix substituting the Zn atoms. In contrast, for the nonuniform samples, metallic Co inclusions are also observed. These results are in strong correlation with the magnetic properties of the films studied separately. Samples with the uniform Co distribution (Co substitutes Zn in ZnO) are paramagnetic, whereas the nonuniform ones show a ferromagnetic response.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
Autorzy:
Wachnicki, Ł.
Dużyńska, A.
Domagala, J.
Witkowski, B.
Krajewski, T.
Przeździecka, E.
Guziewicz, M.
Wierzbicka, A.
Kopalko, K.
Figge, S.
Hommel, D.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492723.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Aa
61.05.cp
81.05.Dz
Opis:
Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure of Cubic HgS
Autorzy:
Guziewicz, E.
Kowalski, B.
Orłowski, B. A.
Dybko, K.
Witkowska, B.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1873013.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
Reflectivity spectra of Hg$\text{}_{1-x}$Fe$\text{}_{x}$S (x < 0.04) and HgSe$\text{}_{1-y}$S$\text{}_{y}$ (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modification of HgS resulting from the above data is analyzed and discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 395-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shallow Ohmic Contact System to n-GaAs
Autorzy:
Kamińska, E.
Piotrowska, A.
Piotrowski, T. T.
Barcz, A.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1929764.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 804-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
Autorzy:
Taube, A.
Guziewicz, M.
Kosiel, K.
Gołaszewska-Malec, K.
Król, K.
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/953063.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
aluminum oxide
MOS
silicon carbide
4H-SiC
high-K dielectrics
tlenek glinu
węglik krzemu
dielektryki high-k
Opis:
The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Visible Luminescence from Porous Silicon
Autorzy:
Bała, W.
Firszt, F.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Orłowski, B. A.
Kowalski, B. J.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1929748.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
Opis:
This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 761-764
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Gołacki, Z.
Orłowski, B. A.
Johnson, R. L.
Masek, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968113.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Fx
79.60.-i
Opis:
A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te crystal.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 793-796
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 39

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