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Tytuł:
Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions
Autorzy:
Makhniy, V.
Khusnutdinov, S.
Gorley, V.
Powiązania:
https://bibliotekanauki.pl/articles/1791303.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
The p-ZnO/n-ZnSe heterojunction was prepared by the photothermal oxidation of ZnSe substrate. Current- voltage characteristics are measured and discussed. The potential barrier height is equal to 3 eV at 300 K and its anomalous temperature coefficient reported here is due to the high defects concentration ( ≈ $10^{14} cm^{-2}$) on the interface. It is established that forward current in p-n junction is limited by the recombination processes in the space charge region, carriers tunneling and above the barrier emission. The reverse current is determined by tunneling processes at low bias and avalanche effect at high bias.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 859-861
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quasi Fermi Levels in Semiconductor Photovoltaic Heterojunction
Autorzy:
Orlowski, B.
Pieniazek, A.
Goscinski, K.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1185195.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
The photovoltaic heterojunction elements are build of two different semiconductors of n and p type. Under cell illumination the same density of n and p carriers are created in each generation point but it leads to the remarkably higher increase of relative concentration for minority than for majority carriers. It is causing bigger energy change of the quasi Fermi level of minority than of majority carriers. The minority carriers decide of the value of generated photovoltage while the majority carriers contribution to it, in most cases can be neglected. Measured change of the generated open circuit photovoltage versus illumination light intensity allows to estimate corresponding to it increase of the minority carrier concentration. These allows as well to scan the part of the forbidden gap region by the minority carriers quasi Fermi level and in a case of impurity or defect levels located in forbidden gap it can influence on the continuous dependence of generated photovoltage versus light intensity e.g. for pinning of the Fermi level. To create efficient photovoltaic heterojunction it will need to study electronic properties of the used impurities and their proper distribution in the region of junction.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-100-A-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Fluctuations in Microstructures of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Lenard, A.
Plesiewicz, W.
Jaroszyński, J.
Cieplak, Marek
Skośkiewicz, T.
Dietl, T.
Kamińska, E.
Piotrowska, A.
Bulka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1890700.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
Microscopic four-contact probes to semimagnetic HgCdMnTe grain-boundary inversion layers have been photolithographically patterned. Magnetoresistance measurements performed on these samples revealed aperiodic conductance fluctuations of the magnitude of the order of e$\text{}^{2}$/h. Quantitative analysis of both fluctuation amplitude and their mean period indicate that we have approached the mesoscopic regime in our system. This opens new possibilities in studies of spin-subsystem dynamics in semimagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 307-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Studies of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Wróbel, J.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1879930.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.40.Lq
Opis:
We report preliminary results of optical measurements performed on Hg$\text{}_{1-x-k}$Cd$\text{}_{x}$Mn$\text{}_{k}$Te grain boundaries. Photovoltaic spectra and I-V characteristics under illumination exhibit metastable behavior, confirming our previous conclusions based on transport measurements under high hydrostatic pressure.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 221-223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Coefficient for a Double-Barrier Quantum Well Structure
Autorzy:
Kaczmarek, E.
Szkiełko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1891331.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
73.40.Gk
Opis:
In this paper the transmission coefficient for a double-barrier quantum well (DBQW) structure as a function of applied voltage is calculated, for the first time, using WKB approximation: This approach allows to discuss a dependence of several quantities characteristic of the system (e.g. the value of the coefficient, resonance voltage, charge stored in the well) on the barrier and the well parameters.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 441-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface Energy Spectrum of Real PbTe/SnTe Heterojunction
Autorzy:
Litvinov, V. I.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1923797.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.50.+t
Opis:
The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the (111) and (001) planes is calculated. It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 805-808
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deformation Potentials in IV-VI Quantum Wells
Autorzy:
Litvinov, V.
Dugaev, V.
Oszwałdowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1872656.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.50.+t
Opis:
Theoretical studies of the deformation potentials in quantum wells and superlattices are presented. It is shown that a difference exists between the bulk deformation potentials and deformation potentials in the low dimensional structures made of narrow-gap semiconductors.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Properties of Heterojunctions of Some TCNQ Salts in Polymer Matrices with p- or n-Doped Silicon
Autorzy:
Jeszka, J. K.
Tracz, A.
Boiteux, G.
Seytre, G.
Kryszewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933656.pdf
Data publikacji:
1995-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.80.Le
Opis:
The temperature dependence of the electrical properties of heterojunctions with silicon formed by conductive organic polymer composites with networks of two complex tetracyanoquinodimethane salts (of N-n-butyl-isoquinolinium and of diethyl methyl sulphonium cations) were studied. We show that it is possible to prepare junctions with quite good rectifying properties, comparable to those obtained using other organic semiconductors. The observed forward-bias current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Reverse bias and C-V characteristics show that the transport mechanism, especially in the case of p-Si junctions is more complicated and probably tunnelling between localized levels plays an important role.
Źródło:
Acta Physica Polonica A; 1995, 88, 3; 533-541
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Iron-Boron Pair in Silicon: Old Problem Anew
Autorzy:
Dobaczewski, L.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1946552.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
For the iron-boron pair in the p-type silicon two different configurations of the defect are observed: stable and metastable. The reported metastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rate equations for the two-step iron-boron pair dissociation allowed us to evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the metastable pair is the minority carrier injection followed by the electron-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy allowed us to demonstrate for both of the configurations the influence of the magnetic field on the hole emission.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 613-622
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance of a Quantum Wire with Finite Length
Autorzy:
Suhrke, M.
Wilke, S.
Keiper, R.
Powiązania:
https://bibliotekanauki.pl/articles/1879929.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.20.Fr
72.10.Bg
Opis:
The conductance of a ballistic quantum wire between two reservoirs exhibits steps of height 2e$\text{}^{2}$/h, if the occupation of transverse subbands is changed. We investigate conditions for observation of these steps starting from Kubo-Greenwood formula. We show how the conductance steps are influenced by the properties of the external regions as well as by the nature of the connection between these regions and the wire. Furthermore we incorporate residual scattering in long wires.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Liquids in Coupled Quantum Wells
Autorzy:
Świerkowski, L.
Szymański, J.
Neilson, D.
Powiązania:
https://bibliotekanauki.pl/articles/1929610.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.45.Gm
71.45.Lr
Opis:
A system comprising of two adjacent layers of conduction electrons or alternatively a layer of electrons and a layer of holes can exhibit novel instabilities in the liquid phase towards inhomogeneous ground states. The carriers in the two layers can couple to each other through the Coulomb interaction but they are not permitted to tunnel so that the charges in one layer act as a polarisable background for the other layer. The presence of a second layer encourages the formation of novel ground states with inhomogeneous density distributions. We find theoretical evidence for the existence of charge density wave ground states and also a coupled Wigner crystal. These exist at much higher densities than the Wigner crystallisation density for the single layer case. The existence of these inhomogeneous ground states leads to significant modifications of the low lying excitation spectrum in the uniform liquid phase. Near the transitions to both the charge density wave and the coupled Wigner crystal phases we find evidence of the development in the liquid phase of new soft mode excitations of finite wave number q that are precursors of the inhomogeneous ground states. Near the transition to the coupled Wigner crystal we observe a strong tendency of the single particle excitation spectrum for the liquid phase to renormalise into a single line that has a dispersion closely resembling the phonon dispersion curve for the solid.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 445-457
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoresponse of Porous Silicon Structures to Infrared Radiation
Autorzy:
Samuolienė, N.
Širmulis, E.
Stupakova, J.
Gradauskas, J.
Zagadskij, V.
Šatkovskis, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505483.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Rb
78.56.-a
73.40.Lq
Opis:
Photoresponse of silicon samples containing porous structures have been studied under the action of $CO_2$ laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 137-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:
Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
Autorzy:
Dobaczewski, L.
Kamiński, P.
Kozłowski, R.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933733.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 703-706
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen and its Complexes in Silicon
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Gosciński, K.
Andersen, O.
Powiązania:
https://bibliotekanauki.pl/articles/2014151.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 231-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 30

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