Temat: subthreshold - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A model of partially-depleted SOI MOSFETs in the subthreshold range
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K.
Powiązania:: https://bibliotekanauki.pl/articles/308425.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
subthreshold range
floating body
transconductance
Opis:: A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Laser trabeculoplasty and subthreshold transscleral cyclophotocoagulation – the new therapeutic options are modifying therapeutic algorithm in glaucoma
Autorzy:: Wasyluk, Jaromir
Kaczmarek, Ilona
Różycki, Radosław
Powiązania:: https://bibliotekanauki.pl/articles/1928020.pdf
Data publikacji:: 2020
Wydawca:: Medical Education
Tematy:: glaucoma
laser trabeculoplasty
subthreshold transscleral cyclophotocoagulation
Opis:: Selective laser trabeculoplasty (SLT) and micropulse laser trabeculoplasty (MLT) are well established, non-invasive laser procedures in glaucoma, but their place in the therapeutic algorithm still evolves. Lately published multicenter randomized clinical trials indicate the need to consider laser trabeculoplasty as the first-line treatment before medications in primary open-angle glaucoma an ocular hypertension due to its favorable safety profile, efficacy and cost-effectiveness. Subthreshold transscleral cyclophotocoagulation (present on the market under different brand names: SubCyclo® TS-CPC [Quantel, France] or Cyclo G6® mTS-CPC [Iridex, USA]) is an antiglaucomatous laser procedure, recently arousing more and more interest in ophthalmologists as a new non-invasive method in our therapeutic portfolio. This new device utilizes 810 nm diode laser beam, fractionated into ultra-short pulses, resulting in low energy spots without causing ciliary body coagulation. Subthreshold (or subliminal) energy delivered during the session spares the tissue due to very limited local heat accumulation zone and therefore this procedure may be repeated. Laser energy partially disables aqueous producing ciliary epithelium and opens supraciliary space thus activating the additional outflow facility. Subthreshold TS-CPC in several clinical trials proved to be effective in lowering the intraocular pressure and devoid of significant sight threatening side effects, comparing to the classical thermal diode cyclophotocoagulation method.
Źródło:: OphthaTherapy; 2020, 7, 4; 342-346
2353-7175
2543-9987
Pojawia się w:: OphthaTherapy
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications
Autorzy:: Birla, Shilpi
Powiązania:: https://bibliotekanauki.pl/articles/226772.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: FinFET
RSNM
WSNM
hold margin
subthreshold
leakage power
Opis:: In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed.
Źródło:: International Journal of Electronics and Telecommunications; 2019, 65, 4; 603-609
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 4.

Tytuł:: The temperature dependence of subthreshold characteristics of Si and SiC power MOSFETs
Autorzy:: Kraśniewski, J.
Janke, W.
Powiązania:: https://bibliotekanauki.pl/articles/118323.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Koszalińska. Wydawnictwo Uczelniane
Tematy:: MOSFET
power transistor
subthreshold
temperature dependence
tranzystor mocy
obszar podprogowy
zależność od temperatury
Opis:: In the paper, subthreshold characteristics of Si and SiC MOSFET power transistors in a wide range of current and temperature are considered. Representative examples of measured iD-vGS dependencies for temperatures from 20°C up to over 140°C are presented and discussed. Substantial differences of the shapes obtained for Si and SiC devices are observed. The subthreshold slope and subthreshold swing coefficient are extracted from measured curves for two types of devices and compared.
W niniejszym artykule porównano charakterystyki w obszarze podprogowym tranzystorów mocy MOSFET z krzemu i węglika krzemu w szerokim zakresie prądu i temperatury. Dla reprezentatywnej partii tranzystorów przedstawiono i omówiono pomiary zależności iD-vGS w szerokim zakresie temperatur od 20°C do ponad 140°C. Dodatkowo zaprezentowano różnice w wartości nachylenia oraz wahania współczynnika w obszarze podprogowym od temperatury otoczenia dla badanych tranzystorów z Si i SiC.
Źródło:: Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej; 2016, 9; 51-58
1897-7421
Pojawia się w:: Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 5.

Tytuł:: Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime
Autorzy:: Osthaug, J.
Fjeldly, T.A.
Iniguez, B.
Powiązania:: https://bibliotekanauki.pl/articles/308041.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: sub-100 nm MOSFET
two-dimensional device modeling
conformal mapping
threshold voltage
subthreshold regime
leakage current
Opis:: Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 70-79
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "subthreshold" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język