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Wyszukujesz frazę "Srivastava, M." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Numerical solutions of a steady 2-D incompressible flow in a rectangular domain with wall slip boundary conditions using the finite volume method
    Autorzy:
    Ambethkar, V.
    Srivastava, M. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/973635.pdf
    Data publikacji:
    2017
    Wydawca:
    Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
    Tematy:
    finite volume method
    numerical solutions
    pressure
    Reynolds number
    SIMPLE algorithm
    staggered grid
    u-velocity
    v-velocity
    przepływy cieczy
    metoda objętości skończonej
    metody numeryczne
    liczba Reynoldsa
    algorytm SIMPLE
    metoda siatek przesuniętych
    Opis:
    In this study, a finite volume method (FVM) is suitably used for solving the problem of a fully coupled fluid flow in a rectangular domain with slip boundary conditions. Numerical solutions for the flow variables, viz. velocity, and pressure have been computed. The FVM, with an upwind scheme, has been implemented to discretize the governing equations of the present problem. The well known SIMPLE algorithm is employed for pressure-velocity coupling. This was executed with the aid of a computer program developed and run in a C-compiler. Computations have been performed for unknown variables with Reynolds numbers (Re) = 50, 100, 250, 500, 750 and 1000. The behavior of steady-state solutions of velocity and pressure of the fluid along horizontal and vertical through geometric center of the rectangular domain have been illustrated. We observed that, with the increase of the Reynolds number, the absolute value of velocity components decreases whereas the pressure value increases.
    Źródło:
    Journal of Applied Mathematics and Computational Mechanics; 2017, 16, 2; 5-16
    2299-9965
    Pojawia się w:
    Journal of Applied Mathematics and Computational Mechanics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Genetic Algorithm for Combined Speaker and Speech Recognition using Deep Neural Networks
    Autorzy:
    Kaur, G.
    Srivastava, M.
    Kumar, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/958089.pdf
    Data publikacji:
    2018
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    deep neural networks
    genetic algorithm
    LPCC
    MFCC
    PLP
    RASTA-PLP
    speaker recognition
    speech recognition
    Opis:
    Huge growth is observed in the speech and speaker recognition field due to many artificial intelligence algorithms being applied. Speech is used to convey messages via the language being spoken, emotions, gender and speaker identity. Many real applications in healthcare are based upon speech and speaker recognition, e.g. a voice-controlled wheelchair helps control the chair. In this paper, we use a genetic algorithm (GA) for combined speaker and speech recognition, relying on optimized Mel Frequency Cepstral Coefficient (MFCC) speech features, and classification is performed using a Deep Neural Network (DNN). In the first phase, feature extraction using MFCC is executed. Then, feature optimization is performed using GA. In the second phase training is conducted using DNN. Evaluation and validation of the proposed work model is done by setting a real environment, and efficiency is calculated on the basis of such parameters as accuracy, precision rate, recall rate, sensitivity, and specificity. Also, this paper presents an evaluation of such feature extraction methods as linear predictive coding coefficient (LPCC), perceptual linear prediction (PLP), mel frequency cepstral coefficients (MFCC) and relative spectra filtering (RASTA), with all of them used for combined speaker and speech recognition systems. A comparison of different methods based on existing techniques for both clean and noisy environments is made as well.
    Źródło:
    Journal of Telecommunications and Information Technology; 2018, 2; 23-31
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Performance Comparison of Stacked Dual-Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET
    Autorzy:
    Dargar, Abha
    Srivastava, Viranjay M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1844602.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    short-channel effects
    metal oxide semiconductor
    transistor
    cylindrical surrounding double-gate
    dual-material gate
    microelectronics
    nanotechnology
    Opis:
    In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in a stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation in channel field formation. Further, the internal gate's threshold voltage (VTH1) could be reduced compared to the external gate (VTH2) by arranging the gate metal work-function in Double Gate devices. Therefore, a device design of CSDG MOSFET has been realized to instigate the effect of Dual Metal Gate (DMG) stack architecture in the CSDG device. The comparison of device simulation shown optimized electric field and surface potential profile. The gradual decrease of metal work function towards the drain also improves the Drain Induced Barrier Lowering (DIBL) and subthreshold characteristics. The physics-based analysis of gate stack CSDG MOSFET that operates in saturation involving the analogy of cylindrical dual metal gates has been considered to evaluate the performance improvements. The insights obtained from the results using the gate-stack dual metal structure of CSDG are quite promising, which can serve as a guide to further reduce the threshold voltage roll-off, suppress the Hot Carrier Effects (HCEs) and Short Channel Effects (SCEs).
    Źródło:
    International Journal of Electronics and Telecommunications; 2021, 67, 1; 29-34
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PixSel : Images as Book Cipher Keys : An Efficient Implementation Using Partial Homophonic Substitution Ciphers
    Autorzy:
    Shumay, M.
    Srivastava, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/226555.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    book ciphers
    ciphertext enlargement
    ciphertext expansion
    Opis:
    In this paper we introduce a novel encryption Technique, which we call PixSel. This technique uses images in place of literature as the book cipher’s key. Conventional book ciphers possess an unwieldy ciphertext enlargement, creating ciphertexts multiple times the length of the plaintext. As well, there is often the issue of a given book not containing the necessary material for the encipherment of some plaintexts. We sought to rectify these nuisances with PixSel, possessing a typical ciphertext enlargement of merely 1% to 20% for text. Using PixSel, there are also no limitations on encipherable data type, given a suitable image.
    Źródło:
    International Journal of Electronics and Telecommunications; 2018, 64, 2; 151-158
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inverse Hall-Petch Like Mechanical Behaviour in Nanophase Al-Cu-Fe Quasicrystals: A New Phenomenon
    Autorzy:
    Mukhopadhyay, N.
    Ali, F.
    Scudino, S.
    Samadi Khoshkhoo, M.
    Stoica, M.
    Srivastava, V.
    Uhlenwinkel, V.
    Vaughan, G.
    Suryanarayana, C.
    Eckert, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373423.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    Opis:
    The structural and mechanical stability of quasicrystals are important issues due to their potential for possible applications at high temperatures and stresses. The aim of the present work is, therefore, to review the earlier works on conventional crystalline and quasicrystalline materials and also to report the results and the analysis on the Hall-Petch and inverse Hall-Petch like behavior of nanoquasicrystalline $Al_{62.5}Cu_{25}Fe_{12.5}$ alloys. It was observed that, at large grain sizes, the hardness increases with decreasing grain size, exhibiting the conventional Hall-Petch relationship, whereas for smaller grains, inverse Hall-Petch behavior was identified. The inverse Hall-Petch behavior in the nanoquasicrystalline phase could be attributed to thermally activated shearing of the grain boundaries, leading to grain boundary sliding in nanostructures of quasicrystalline grains. These results were analyzed based on the dislocation pile-up model as well as the grain boundary shearing models applicable to nanomaterials.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 543-548
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Leaching of Al-Based Polygrain Quasicrystalline and Related Crystalline Surfaces
    Autorzy:
    Yadav, T.
    Mishra, S.
    Pandey, S.
    Singh, D.
    Lowe, M.
    Tamura, R.
    Mukhopadhyay, N.
    Srivastava, O.
    McGrath, R.
    Sharma, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1373698.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    81.16.Hc
    61.66.Dk
    68.37.Hk
    Opis:
    In the present investigation, we have studied leaching on polygrain Al-based quasicrystalline $(i-Al_{63}Cu_{25}Fe_{12})$ as well as crystalline (B2 phase; $Al_{55}Cu_{30}Fe_{15})$ alloy surfaces using a 10 mole NaOH solution. The surface was leached at varying times from 30 min to 8 h and subsequently characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray analysis. Leaching of the samples for 30 min generated a homogeneous layer. However further leaching for 1-8 h yielded nano-size particles on the surface. Spherical microstructure has been observed on the Al-Cu-Fe crystalline surface whereas on the quasicrystalline surface a petal-like microstructure appeared. The implications of the evolution of different microstructures in the context of structure, stability and activity are discussed. The results are compared with the microstructure of leached polygrained samples containing a mixture of different surface orientations.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 629-632
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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