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Wyszukujesz frazę "Bondarenko, T." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Elektrofizjologiczna charakterystyka krzewów podszytowych w lasostepie zachodniej Ukrainy
Electrophysiological characteristics of undergrowth shrubs in the forest-steppe zone of western Ukraine
Autorzy:
Bondarenko, T.V.
Powiązania:
https://bibliotekanauki.pl/articles/1318169.pdf
Data publikacji:
2013
Wydawca:
Instytut Badawczy Leśnictwa
Tematy:
Ukraina
lasostep
podszyt
krzewy
leszczyna pospolita
Corylus avellana
trzmielina zwyczajna
Euonymus europaeus
trzmielina brodawkowata
Euonymus verrucosus
bez czarny
Sambucus nigra
deren swidwa
Cornus sanguinea
kruszyna pospolita
Frangula alnus
szaklak pospolity
Rhamnus cathartica
sliwa tarnina
Prunus spinosa
roza dzika
Rosa canina
kalina koralowa
Viburnum opulus
glog jednoszyjkowy
Crataegus monogyna
tawula
Spirea
tkanki roslinne
parametry dielektryczne
impedancja
pojemnosc polaryzacyjna
electrophysiological characteristics
dielectric parameters
understorey
impedance
polarization capacity
shrubs
stand density
Opis:
The article reviews the electrophysiological characteristics of pre-cambial phloem material in undergrowth shrubs. The electrophysiological properties of hazel (Corylus avellana L.), elder (Sambucus nigra L.) and other undergrowth shrubs are compared, as well as how these characteristics change depending on stand density indices. Differences in electrophysiological characteristics reveal the crucial role of light for the growth, development and persistence of undergrowth shrubs. I suggest that a quantitative assessment of electrophysiological characteristics should be undertaken when managing forest stands for the creation of desirable undergrowth.
Źródło:
Leśne Prace Badawcze; 2013, 74, 1; 13-16
1732-9442
2082-8926
Pojawia się w:
Leśne Prace Badawcze
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Poziom chlorofilu a i b w liściach krzewów podszytowych w grabowo-dębowych lasach lasostepu Ukrainy Zachodniej
The content of chlorophyll a and chlorophyll b in leaves of undergrowth species in hornbeam-oak forest stands of the forest-steppe zone in Western Ukraine
Autorzy:
Zaika, V.
Bondarenko, T.
Powiązania:
https://bibliotekanauki.pl/articles/1292298.pdf
Data publikacji:
2018
Wydawca:
Instytut Badawczy Leśnictwa
Tematy:
lesnictwo
drzewostany grabowo-debowe
podszyt
krzewy
liscie
chlorofil a
chlorofil b
poziom chlorofilu
lasostep
Ukraina Zachodnia
shrubs
plastid pigments
chlorophyll a
chlorophyll b
hornbeam-oak forest stands
forest-steppe zone of western
Ukraine
Opis:
In this study, the biosynthesis of the plastid pigments chlorophyll a and b was examined for the most common shrubs in hornbeam-oak forest stands of the Western forest-steppe zone of Ukraine. The characteristics of the pigments’ biosynthesis were determined in terms of plant species, vegetation period and growth conditions (under canopy cover and out in the open). The gathered data on the changes of the pigment complex with respect to the examined variables confirms the sensitivity of plastid pigment biosynthesis to environmental factors.
Źródło:
Leśne Prace Badawcze; 2018, 79, 1
1732-9442
2082-8926
Pojawia się w:
Leśne Prace Badawcze
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charging Device of Capacitive Energy Storage for Micro Resistance Welding
Autorzy:
Kozhushko, Y.
Karbivska, T.
Zinchenko, D.
Pavković, D.
Rosolowski, E.
Bondarenko, O.
Powiązania:
https://bibliotekanauki.pl/articles/410521.pdf
Data publikacji:
2018
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
micro resistance welding
supercapacitor
capacitive energy storage
flyback converter
Opis:
Micro resistance welding is the most common technology for making permanent connection between two conducting materials. This paper proposes a high-efficiency charging device for the capacitive energy storage within the micro resistance welding device power supply utilizing a Flyback converter. Based on the comprehensive analysis of charging device losses, it is determined that one of the main sources of conduction losses in the charging device is the output diode. In order to ameliorate this problem, utilization of a MOSFET transistor as an output diode within the Flyback converter is proposed in order to increase its overall efficiency. The presented results suggest that the proposed Flyback converter topology could improve the power efficiency by 7.0% at 50 kHz switching frequency through minimization of conduction losses in comparison with the traditionally-used Schottky diode.
Źródło:
Present Problems of Power System Control; 2018, 9; 5-17
2084-2201
Pojawia się w:
Present Problems of Power System Control
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Functional model for the synthesis of nanostructures of the given quality level
Autorzy:
Suchikova, Y.O.
Kovachov, S.S.
Shishkin, G.O.
Pimenov, D.O.
Lazarenko, A.S.
Bondarenko, V.V.
Bogdanov, I.T.
Powiązania:
https://bibliotekanauki.pl/articles/2175807.pdf
Data publikacji:
2021
Wydawca:
Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
Tematy:
functional model
electrochemical etching
quality level
semiconductors
nanostructures
IDEF0 methodology
model funkcjonalny
trawienie elektrochemiczne
poziom jakości
półprzewodniki
nanostruktury
metodologia IDEF0
Opis:
Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
Źródło:
Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
1897-2764
Pojawia się w:
Archives of Materials Science and Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide
Autorzy:
Kovachov, S.S.
Bogdanov, I.T.
Pimenov, D.O.
Bondarenko, V.V.
Konovalenko, A.A.
Skurska, M.M.
Konovalenko, I.S.
Suchikova, Y.O.
Powiązania:
https://bibliotekanauki.pl/articles/2175768.pdf
Data publikacji:
2021
Wydawca:
Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
Tematy:
semiconductors
nanostructures
chemical criterion
indium phosphide
quality indicators
półprzewodniki
nanostruktury
kryterium chemiczne
fosforek indu
wskaźniki jakości
Opis:
Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.
Źródło:
Archives of Materials Science and Engineering; 2021, 110, 1; 18--26
1897-2764
Pojawia się w:
Archives of Materials Science and Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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