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Tytuł:
Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals
Autorzy:
Ašmontas, S.
Raguotis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813219.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.65.Pp
72.10.-d
72.10.Fk
72.20.Dp
Opis:
Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot-Electron Effects in High-Resistivity InSb
Autorzy:
Ašmontas, S.
Subačius, L.
Valušis, G.
Powiązania:
https://bibliotekanauki.pl/articles/1929737.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
We report that in the presence of random potential of the conduction band hot-electron transport can exhibit some novel features, some of which can be observed in dependencies of electric conductivity, mean electron energy and noise temperature on electric field strength.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 717-720
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Distributions in the Open Cylindrical Silicon Carbide Waveguides
Autorzy:
Asmontas, S.
Nickelson, L.
Gric, T.
Powiązania:
https://bibliotekanauki.pl/articles/1807970.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
75.47.Gk
73.50.Fq
Opis:
Here are presented the results of an electrodynamical analysis of the SiC waveguides with two different radii R=1.5 mm and R=2.5 mm. We have investigated the dispersion characteristics of these waveguides as well as the electric field distributions in the waveguide cross-sections at f=50 and 25 GHz.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1160-1161
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Method for Measuring the Specific Electrical Conductivity of an Anisotropically Conductive Medium
Autorzy:
Ašmontas, S.
Kleiza, V.
Kleiza, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812345.pdf
Data publikacji:
2008-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.20.Dk
02.60.Cb
Opis:
The paper deals with the ways of finding an electrical conductivity tensor of a plane and anisotropically conductive sample. Application of the Van der Pauw method to investigate the conductivity of anisotropically conductive media makes the basis of research. Several models of distribution of the electric field potential are presented, their merits and demerits are discussed, and the necessary physical measurements are indicated. On the basis of these models, the respective calculation expressions of the specific conductivity tensor are derived and algorithms for their realization and error calculation are developed.
Źródło:
Acta Physica Polonica A; 2008, 113, 6; 1559-1569
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Applicable Damage of High-$T_{c}$ YbaCuO Superconducting Tapes by Current and Laser Pulses
Autorzy:
Kiprijanovič, O.
Ašmontas, S.
Anisimovas, F.
Gradauskas, J.
Powiązania:
https://bibliotekanauki.pl/articles/1506252.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.F-
74.25.fc
74.25.Op
85.25.Am
Opis:
Damage and irreversible damage of YBaCuO tapes with high density current after switching from superconducting to normal state are investigated. Quasi-homogeneous current distribution across the tape in superconducting state can cause perfect tape damage or irreversible damage when current is slightly above critical value. The model of the tape heating during the optically initiated switching from superconducting to normal state is proposed. Analysis of causes inducing damage shows necessity to consider $0.5T_{m}$ damage criterion because of strong current influence on the damage processes. Possible damage mechanisms are described and crack tips motion simultaneously with switching from superconducting to normal state is considered. Application of optically illuminated YBaCuO tapes with nanosecond duration current pulses on the base of the described mechanisms is proposed.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 256-258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Detection of Infrared Laser Pulses on Planar Small Area GaAs/AlGaAs Heterojunction
Autorzy:
Širmulis, E.
Kazlauskaitė, V.
Gradauskas, J.
Sužiedėlis, A.
Ašmontas, S.
Powiązania:
https://bibliotekanauki.pl/articles/1813198.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.40.Kp
Opis:
We report the first experimental observation of fast photovoltage in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond $CO_2$ laser pulses. This device revealed itself as a sensitive detector of millimeter waves and as a fast IR sensor operating at room temperature. Taking into account fast response of the detector and close to linear voltage-power dependence, the results are interpreted by photoemission of hot carriers over the potential barrier of the heterojunction.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 851-854
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection
Autorzy:
Ašmontas, S.
Gradauskas, J.
Kozič, A.
Shtrikmann, H.
Sužiedėlis, A.
Powiązania:
https://bibliotekanauki.pl/articles/2041657.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.40.-x
07.57.Kp
Opis:
Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n$\text{}^{+}$ junctions was observed experimentally in K$\text{}_{a}$ frequency range, which coincides well with theoretical predictions.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 147-150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of High Power Infrared Detection on Narrow-Gap Semiconductor p-n Junctions
Autorzy:
Gradauskas, J.
Širmulis, E.
Ašmontas, S.
Sužiedėlis, A.
Dashevsky, Z.
Kasiyan, V.
Powiązania:
https://bibliotekanauki.pl/articles/1506219.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.56.-a
78.70.-g
84.60.Jt
85.60.Dw
Opis:
We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed $CO_2$ laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 237-240
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistive Properties of Manganite-Based Heterojunctions
Autorzy:
Devenson, J.
Vengalis, B.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Ašmontas, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807945.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
71.30.+h
73.50.-h
Opis:
Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1130-1132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation
Autorzy:
Stupakova, J.
Ašmontas, S.
Gradauskas, J.
Zagadskij, V.
Shatkovskis, E.
Sužiedėlis, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047172.pdf
Data publikacji:
2006-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
78.55.Mb
85.30.De
Opis:
Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
Źródło:
Acta Physica Polonica A; 2006, 110, 6; 817-822
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Electron Effect in Degenerate Semiconductor Tunnel Junction
Autorzy:
Ašmontas, S.
Gradauskas, J.
Petkun, V.
Seliuta, D.
Sužiedėlis, A.
Urbelis, A.
Powiązania:
https://bibliotekanauki.pl/articles/2041722.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
73.40.Gk
07.57.Kp
Opis:
We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 198-202
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:
Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1505529.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
68.65.-k
Opis:
We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
Autorzy:
Kozič, A.
Paškevič, Č.
Sužiedėlis, A.
Gradauskas, J.
Ašmontas, S.
Szerling, A.
Wrzesińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/2047175.pdf
Data publikacji:
2006-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
72.30.+q
Opis:
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.
Źródło:
Acta Physica Polonica A; 2006, 110, 6; 845-849
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reversible Resistive Switching in Electrically Nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ Thin Films by Short Electrical Pulses
Autorzy:
Lučun, A.
Kiprijanovič, O.
Ašmontas, S.
Anisimovas, F.
Maneikis, A.
Sužied.lis, A.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813407.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Gk
75.47.Lx
07.57.Kp
Opis:
Resistance changes in thin electrically nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ films were investigated using electrical pulses of nanosecond duration in the 80-300 K temperature range. Two types of reversible switching to higher resistive states with different starting temperature induced by series of the positive pulses were observed. Possible mechanisms of the resistance switching by short electrical pulses in the vicinity of $T_m$ and at 80-90 K are discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1059-1062
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:
Kundrotas, J.
Čerškus, A.
Ašmontas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Harrison, P.
Steer, M.
Powiązania:
https://bibliotekanauki.pl/articles/1178273.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.55.-m
Opis:
We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 245-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 24

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