- Tytuł:
- Reliability of deep submicron MOSFETs
- Autorzy:
- Balestra, F.
- Powiązania:
- https://bibliotekanauki.pl/articles/307658.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
bulk MOSFETs
SOI devices
deep submicron
transistors
reliability - Opis:
- In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of gate length and temperature is given. The main hot carrier effects and degradation are compared for bulk and SOI devices in a wide range of gate length, down to deep submicron. The worst case aging, defice lifetime and maximum drain bias that can be applied are addressed. The physical mechanisms and the emergence of new phenomena at the origin of the degradation are studied for advanced MOS transistors. The impact of the substrate bias is also outlined.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 12-17
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł