- Tytuł:
- Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation
- Autorzy:
-
Papadopoulou, P.
Stavrinides, S.
Hanias, M.
Magafas, L. - Powiązania:
- https://bibliotekanauki.pl/articles/1401377.pdf
- Data publikacji:
- 2015-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
85.30.De
85.30.Mn
85.30.Hi - Opis:
- In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
- Źródło:
-
Acta Physica Polonica A; 2015, 127, 4; 1349-1351
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł