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Wyszukujesz frazę "Nikolaenko, Yu." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Fast Bolometric Response of Bulk La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Electroceramic Structures
Autorzy:
Nikolaenko, Yu. M.
Maksimov, I. S.
Medvedev, Yu. V.
Ulyanov, A. N.
Grishin, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/2014001.pdf
Data publikacji:
2000-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
85.60.Gz
72.15.Gd
Opis:
We report on the performance of a microwave electroceramic bolometer of hybrid La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$/Al$\text{}_{2}$O$\text{}_{3}$ (0.2×2×4 mm$\text{}^{3}$) structure. The estimated thermal resistance of the bulk ceramic manganite film-single crystal sapphire interface is about 500 K/W at room temperature. This resistance is the main thermal barrier in the heat sink system and has been found to be slightly dependent on temperature. When compared with the high-T$\text{}_{c}$ superconducting bolometers, the La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ microwave electroceramic bolometer works in a more wide temperature range, from 77 K to 330 K, excluding the narrow temperature interval at the metal-insulator phase transition (T=230 K). The microwave electroceramic bolometer sensitivity and the time constant at room temperature have been found to be 0.1 V/W and 100 ms, respectively. To improve the bolometer performance the point contact has been fabricated by a break junction technique. The optimization of a microwave electroceramic bolometer design brought to a considerable improvement of basic bolometer characteristics. The microwave sensitivity was about 0.3 V/W and the time constant was less than 100 ns.
Źródło:
Acta Physica Polonica A; 2000, 97, 6; 991-995
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and Ferroelectric Ordering in the $TbMnO_3$ Film
Autorzy:
Sazanovich, A.
Nikolaenko, Yu.
Paszkowicz, W.
Mikhaylov, V.
Dyakonov, K.
Medvedev, Yu.
Nizhankovskii, V.
Dyakonov, V.
Szymczak, H.
Powiązania:
https://bibliotekanauki.pl/articles/1207010.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
75.85.+t
75.70.Ak
77.55.Nv
Opis:
Measurements of magnetization and electric polarization performed for the $TbMnO_3$ film grown onto the single crystal [100] $SrTiO_3$ substrate using magnetron sputtering technique exhibit series of anomalies related to the magnetic and electric ordering of the $Tb^{3+}$ and $Mn^{3+}$ sublattices. The detailed temperature dependences of the electric polarization and dielectric constant of the $TbMnO_3$ film have shown that the ferroelectric phase appears below 30 K in magnetic field H > 1 T applied in-plane and out-of-plane of the film.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 128-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inelastic Relaxation of Oxygen and Low-Field Magnetoresistance in La$\text{}_{0.65}$Ca$\text{}_{0.35}$MnO$\text{}_{3}$ Films on Ferroelectric Ceramics Substrates
Autorzy:
Medvedev, Yu. V.
Mezin, N. I.
Nikolaenko, Yu. M.
Pigur, A. E.
Shishkova, N. V.
Ishchuk, V. M.
Chukanova, I. N.
Powiązania:
https://bibliotekanauki.pl/articles/2041603.pdf
Data publikacji:
2004-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Dy
Opis:
Galvanomagnetic properties of polycrystalline La$\text{}_{0.65}$Ca$\text{}_{0.35}$MnO$\text{}_{3}$ films with a thickness of 0.2~μm deposited onto Pb$\text{}_{2.9}$Ba$\text{}_{0.05}$Sr$\text{}_{0.05}$(Zr$\text{}_{0.4}$Ti$\text{}_{0.6}$)O$\text{}_{3}$ ferroelectric ceramics substrates were investigated. We discovered an irreversible increase in film resistance after numerous inversions of substrate polarization. This phenomenon was investigated several times for three film structures. The typical duration of the process of a monotonic 3-5 times increase in film resistance was 3-6 hours. The long-time relaxation of macroscopic film resistance is explained by dielectrization of film intercrystallite boundaries. The typical size of crystallites of both the film and the substrate is 3-10μm. Such small size explains the fact of macroscopic homogeneity of film conductivity, when the specific resistance increases from 1.8×10$\text{}^{-2}$ to 1.8Ω cm. A growth in resistance of narrow (10 nm) regions of film is explained by the redistribution of oxygen anions under the action of inhomogeneous mechanical stress. The stress between crystallites appears due to inverse piezoelectric effect of ferroelectric substrate. The magnitude of diffusion coefficient of oxygen is estimated to be D≥10$\text{}^{-20}$ m$\text{}^{2}$ s$\text{}^{-1}$.
Źródło:
Acta Physica Polonica A; 2004, 106, 6; 853-859
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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