- Tytuł:
- Hole-Related Electrical Activity of InAs/GaAs Quantum Dots
- Autorzy:
-
Kruszewski, P.
Dobaczewski, L.
Markevich, V.
Mitchell, C.
Missous, M.
Peaker, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1811950.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.21.La
79.40.+z - Opis:
- We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1201-1206
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł