Autor: Ievtushenko, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
Autorzy:: Ievtushenko, A.
Khyzhun, O.
Shtepliuk, I.
Tkach, V.
Lazorenko, V.
Lashkarev, G.
Powiązania:: https://bibliotekanauki.pl/articles/1399119.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
77.55.hf
68.55.Ln
Opis:: Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 858-861
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Spectral Distribution of Photoelectric Efficiency οf Thin-Film CdS/CdTe Heterostructure
Autorzy:: Kosyachenko, L.
Lashkarev, G.
Grushko, E.
Ievtushenko, A.
Sklyarchuk, V.
Mathew, X.
Paulson, P.
Powiązania:: https://bibliotekanauki.pl/articles/1791326.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.60.Jt
85.60.Dw
73.61.Ga
Opis:: The spectral distribution of the quantum efficiency in thin-film CdS/CdTe solar cells is being investigated by taking into account the drift and diffusion components of photocurrent, recombination at the CdS-CdTe interface, the back surface of the CdTe absorber layer and in the space-charge region. The effect of uncompensated acceptor concentration, lifetime of minority carriers and surface recombination velocity on the charge collection efficiency are discussed. The losses caused by reflections and absorption in the CdS and indium tin oxide layers are also considered.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 862-864
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering
Autorzy:: Ievtushenko, A.
Karpyna, V.
Lashkarev, G.
Lazorenko, V.
Baturin, V.
Karpenko, A.
Lunika, M.
Dan'ko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1811931.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.Cd
61.05.cp
68.55.jm
Opis:: Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1131-1137
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Detector with High Internal Photocurrent Gain Based on ZnO:N
Autorzy:: Kosyachenko, L. A.
Lashkarev, G. V.
Ievtushenko, A. I.
Lazorenko, V. I.
Sklyarchuk, V. M.
Sklyarchuk, O. F.
Powiązania:: https://bibliotekanauki.pl/articles/2048107.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.-z
85.60.Dw
Opis:: The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 681-682
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
Autorzy:: Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1156366.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Hf
73.61.Ga
Opis:: Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
Autorzy:: Ievtushenko, A.
Lashkarev, G.
Lazorenko, V.
Karpyna, V.
Sichkovskyi, V.
Kosyachenko, L.
Sklyarchuk, V.
Sklyarchuk, O.
Bosy, V.
Korzhinski, F.
Ulyashin, A.
Khranovskyy, V.
Yakimova, R.
Powiązania:: https://bibliotekanauki.pl/articles/1811930.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.15.Cd
85.60.Dw
72.40.+w
Opis:: Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1123-1129
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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