- Tytuł:
- Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence
- Autorzy:
-
Kudrawiec, R.
Latkowska, M.
Sęk, G.
Misiewicz, J.
Ibáñez, J.
Henini, M.
Hopkinson, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1791353.pdf
- Data publikacji:
- 2009-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
78.66.Fd - Opis:
- GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
- Źródło:
-
Acta Physica Polonica A; 2009, 116, 5; 930-932
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł