- Tytuł:
- Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction
- Autorzy:
- Hadi, H. A.
- Powiązania:
- https://bibliotekanauki.pl/articles/411926.pdf
- Data publikacji:
- 2014
- Wydawca:
- Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
- Tematy:
-
porous silicon
electrochemical etching
spray pyrolysis
fluoride-doped tin oxide film
nanostructures
SEM
AFM
photodetector - Opis:
- In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2 : F for film was deduced. From (I-V) and (C-V) measurements, the barrier ØB height for FTO/PS diode was of 0.77, and the built in voltage Vbi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.
- Źródło:
-
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 2; 142-152
2299-3843 - Pojawia się w:
- International Letters of Chemistry, Physics and Astronomy
- Dostawca treści:
- Biblioteka Nauki