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    Wyświetlanie 1-6 z 6
    Tytuł:
    Harmonic generation analyses of memristor with different barriers and neuron
    Autorzy:
    Babacan, Y.
    Kacar, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1068338.pdf
    Data publikacji:
    2016-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.Bh
    85.25.Hv
    Opis:
    We investigated the Fourier transform of memristor with various barriers and neuristor. To provide the different barriers we present a simple adaptive model dependent on input signal. We saw that there was no significant change of the harmonics with increasing barriers. Neurons provide an energy and area efficient and could be used in neuromorphic circuits. We used a neuron circuit that can be efficient to provide second and higher harmonics. Neuron circuit generates various spike shapes like regular spike, fast spike, initial bursting, chattering, etc. In this paper we analysed the Fourier transform of the most common spike shapes. The neuron or neuristor can be more efficient to generate second and higher harmonics compared to the other standard circuits.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 1; 226-227
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compact Modeling for Submicron Fully Depleted SOI MOSFETs
    Autorzy:
    Remmouche, R.
    Boutaoui, N.
    Bouridah, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491285.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    85.30.Tv
    85.40.Bh
    Opis:
    In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 190-192
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Modeling and Hardware Implementation of Semiconductor Circuit Elements by Using ANN and FPGA
    Autorzy:
    Tuntas, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402542.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.05.Mh
    85.30.De
    85.40.Bh
    Opis:
    This study, the modeling and hardware implementation of semiconductor circuit elements very frequently used in electronic circuits are carried out by using artificial neural networks and field programmable gate array chip. Initially the artificial neural network models obtained has been written in very high speed integrated circuit hardware description language (VHDL). Then, these configurations have been simulated and tested under ModelSim Xilinx software. Finally, the best configuration has been implemented under the Xilinx Spartan-3E FPGA (XC3S500E) chip of Xilinx. The modeling of electronic circuit elements is very important both in respect of engineering, and in respect of practical mathematics. The main aim is to shorten the simulation time and to examine the real physical system applications easily by using the model elements instead of using the ones used in real applications. The effectiveness of the implemented artificial neural network models on field programmable gate array was found successful.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2B; B-78-B-81
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Fast Differential Amplifier-Based Integrated Circuit Yield Analysis Technique
    Autorzy:
    Baskys, A.
    Navickas, R.
    Simkevicius, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506253.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.30.Pq
    85.40.Bh
    85.40.Qx
    Opis:
    The fast differential amplifier-based integrated circuit yield analysis technique, which enables determining the interrelation between the integrated circuit yield and dimensions of circuit elements, has been presented. The technique is based on the common use of experimental statistical analysis and statistical modeling as well as on the introduction of the concept of the integrated circuit intermediate parameters. The results of yield analysis of the concrete integrated circuit based on the differential amplifiers are presented.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 259-261
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
    Autorzy:
    Baeumler, M.
    Polyakov, V.
    Gütle, F.
    Dammann, M.
    Benkhelifa, F.
    Waltereit, P.
    Reiner, R.
    Müller, S.
    Wespel, M.
    Quay, R.
    Mikulla, M.
    Wagner, J.
    Ambacher, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1197910.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Fi
    85.30.De
    85.30.Tv
    85.40.Bh
    85.40.Qx
    73.40.-c
    73.90.+f
    73.61.Ey
    73.50.Mx
    Opis:
    The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 982-985
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets
    Autorzy:
    Bouguerra, A.
    Labbani, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402536.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Bh
    85.40.Ry
    Opis:
    In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C⁺ to a fluence of 2.7× 10¹⁷ ion/cm² at room temperature; (ii) implantation of 40 keV C⁺ to a fluence of 6.5× 10¹⁷ ion/cm² at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2B; B-67-B-70
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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