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Tytuł:
Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy
Autorzy:
Skowroński, W.
Wiśniowski, P.
Wrona, J.
Żywczak, A.
Stobiecki, T.
Powiązania:
https://bibliotekanauki.pl/articles/1386807.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
85.75.Ss
85.35.-p
Opis:
We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 496-498
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Molecular Electronics: A Review of Experimental Results
Autorzy:
Erbe, A.
Verleger, S.
Powiązania:
https://bibliotekanauki.pl/articles/1808307.pdf
Data publikacji:
2009-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.65.+h
73.63.-b
85.35.-p
Opis:
Molecular electronics aims for scaling down electronics to its ultimate limits by choosing single molecules as the building blocks of active devices. The advantages of this approach are the high reproducibility of molecular synthesis on the nanometer scale, the ability of molecules to form large structures by self-assembly, and the huge versatility of molecular complexes. On the other hand, conventional contacting techniques cannot form contacts on the single molecule scale and imaging techniques nowadays cannot provide a detailed image of such junctions. Therefore, the fabrication has to rely to some degree on self-organization of the constituents. The proof that a molecule has been contacted successfully can only be given by indirect methods, for example by measuring the current transport through the junctions. Here we give an overview of various techniques that were used successfully to contact molecules and to characterize them electrically. The techniques range from methods to contact single molecules to such which can be used to characterize ensembles of molecules. Especially, the comparison between such different techniques shows that a single measurement is always prone to artefacts originating from the unknown microscopic details of the junctions. It is therefore necessary to perform a statistically relevant number of measurements in order to resolve molecular properties. Various properties of the molecules can be studied. Special examples are the influence of conformational changes of the molecules, differences between various coupling endgroups of the molecules and effects of light-irradiation onto the molecular junctions.
Źródło:
Acta Physica Polonica A; 2009, 115, 2; 455-461
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Geometrical Parameters on the Transport Characteristics of Gated Core-Multishell Nanowires
Autorzy:
Palutkiewicz, T.
Wołoszyn, M.
Wójcik, P.
Adamowski, J.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1185174.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.63.Nm
85.35.-p
Opis:
Calculations of the current-voltage characteristics of the core-multishell nanowires for different radii of the core and various thicknesses of the shells are presented. A role of the conducting core and shells in the coherent transport under the influence of the gate voltage is discussed.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-111-A-113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Controlled Manipulation of Parameters of the Quantum Antidot
Autorzy:
Pyragienė, T.
Powiązania:
https://bibliotekanauki.pl/articles/1178763.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
85.35.-p
03.65.-w
Opis:
The electron motion in a strong perpendicular magnetic field close to the impenetrable obstacle is considered by the semi-classical and quantum points of view. We investigated an influence of a shape of the forbidden region to the formation of the plateaux in the one electron energy spectrum and transmissions between dot and antidot states. In the semi-classical regime electrons can be treated as charged particles with well-defined trajectories pinned to the potential wall. This approach, combined with singular equation technique in quantum calculations, has given us a possibility to investigate stripe-shaped and bow-shaped antidots with sharp edges and to find a way for controlled manipulation of the parameters of systems with an effort to get desired physical properties.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 392-395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Inverse Problem for Quantum Graphs with One Cycle
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1585121.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
Quantum graphs having one cycle are considered. It is shown that if the cycle contains at least three vertices, then the potential on the graph can be uniquely reconstructed from the corresponding Titchmarsh-Weyl function (Dirichlet-to-Neumann map) associated with graph's boundary, provided certain non-resonant conditions are satisfied.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 765-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport characteristics of gated core-multishell nanowires: Self-consistent approach
Autorzy:
Palutkiewicz, T.
Wołoszyn, M.
Wójcik, P.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1058786.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.63.Nm
85.35.-p
Opis:
The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1190-1192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Spectral Gap for Laplacians on Metric Graphs
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1399045.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
We discuss lower and upper estimates for the spectral gap of the Laplace operator on a finite compact connected metric graph. It is shown that the best lower estimate is given by the spectral gap for the interval with the same total length as the original graph. An explicit upper estimate is given by generalizing Cheeger's approach developed originally for Riemannian manifolds.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 1060-1062
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inverse Problems for Quantum Graphs: Recent Developments and Perspectives
Autorzy:
Kurasov, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492443.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.65.Nk
73.63.-b
85.35.-p
Opis:
An introduction into the area of inverse problems for the Schrödinger operators on metric graphs is given. The case of metric finite trees is treated in detail with the focus on matching conditions. For graphs with loops we show that for almost all matching conditions the potential on the loop is not determined uniquely by the Titchmarsh-Weyl function. The class of all admissible potentials is characterized.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-132-A-141
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:
Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:
Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Problem of Scale in Electric Metrology of Nanostructures in the Context of the New SI Redefinition of the Base Electric Unit
Autorzy:
Chyla, W.
Powiązania:
https://bibliotekanauki.pl/articles/1195604.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.20.fa
85.85.+j
85.35.-p
31.30.jh
06.20.Dk
81.05.ue
Opis:
The classical, electrodynamic definition of the ampere is incoherent with quantum electrodynamics. The problem, although insignificant at the macroscopic scale, manifests clearly at the nanostructure level, where the consistently quantum approach is necessary. In this paper, we consider the Casimir effect to quantify inconsistencies that could have resulted if electric metrology of microstructures and nanostructures (including graphene) had been based on classical electrodynamics and the current SI definition of the ampere. The issue is discussed in the context of the New SI program, where the base electric unit is to be redefined by fixing the numerical value of the elementary charge. The conclusion supports the case for a prompt redefinition of the base electric unit, which will make the electric metrology in general, and the electric metrology of nanostructures in particular, coherent with the international system of units.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 3-12
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of the hydrogen adsorption to the optical properties of boron nitride nanotubes
Autorzy:
Bayani, A.
Powiązania:
https://bibliotekanauki.pl/articles/1070608.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Ch
85.35.-p
68.43.-h
67.63.Cd
67.80.ff
Opis:
In this research we have studied physisorption of hydrogen molecules on armchair (3,3) boron-nitride nanotube using density functional methods. Optical properties of the boron-nitride nanotube, with and without adsorbed H₂ molecules, were investigated under parallel and perpendicular polarized electric fields. The results indicate that the nanotube optical gap slightly changes due to H₂ physisorption and increasing H₂ physisorption suppresses the boron-nitride nanotube optical spectrum. Also, the nanotube gets more transparent as the H₂ concentration increases, in other words boron-nitride nanotube dielectric function decreases. Anisotropic dielectric function is another result which is determined by random phase approximation method.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 348-351
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
Autorzy:
Godlewski, M.
Guziewicz, E.
Gierałtowska, S.
Łuka, G.
Krajewski, T.
Wachnicki, Ł.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807598.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.-p
73.40.Lq
73.40.Qv
81.05.Dz
81.15.-z
Opis:
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-19-S-21
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Standing Waves: a Powerful Tool for Interface Studies
Autorzy:
Lagomarsino, S.
Scarinci, F.
Castrucci, P.
Giannini, C.
Powiązania:
https://bibliotekanauki.pl/articles/1931655.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.85.+n
61.10.Lx
68.35.-p
Opis:
The X-ray standing wave technique has demonstrated in these last years to be a powerful method in the study of interfaces. In this paper the fundamentals of the technique will be given, together with examples of applications in the field of metal-semiconductor, of buried semiconductor-semiconductor interfaces and in structural studies of Langmuir-Blodgett films.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 553-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Magnetostriction Model for MagNEMS
Autorzy:
Szumiata, T.
Gzik-Szumiata, M.
Powiązania:
https://bibliotekanauki.pl/articles/1201850.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.25.-g
85.85.+j
75.80.+q
85.70.Ec
68.35.-p
Opis:
In this work the influence of surface roughness on magnetostrictive nano-actuator parameters has been analyzed theoretically. A mechanical and magnetoelastic behavior of investigated cantilever bimorphic system has been described in the frame of the simple analytical model. Realistic material parameters have been incorporated into the model for high-magnetostrictive galfenol (Fe-Ga) thin films on silicon substrate. It has been shown that for 5 nm thick galfenol film a flat surface magnetostrictive effects modify the cantilever deflection and force only by 3%, whereas in the case of rough surface this influence increases to about 15%, when dimensions of roughness steps are comparable to the distances between them.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 200-201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Response of ZnO/GaN Heterostructure to Ion Irradiation
Autorzy:
Barcz, A.
Pągowska, K.
Kozubal, M.
Guziewicz, E.
Borysiewicz, M.
Dyczewski, J.
Jakieła, R.
Ratajczak, J.
Snigurenko, D.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1402192.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.35.Dv
Opis:
In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 832-835
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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