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Wyszukujesz frazę "Stolyarov, A." wg kryterium: Autor

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    Wyświetlanie 1-3 z 3
    Tytuł:
    Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1381776.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1371-1373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402221.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
    Autorzy:
    Andreev, D.
    Bondarenko, G.
    Andreev, V.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030209.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    72.20.Jv
    73.20.At
    73.40.Qv
    73.40.Ty
    77.22.Jp
    77.55.-g
    Opis:
    Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 245-248
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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