- Tytuł:
- Observation of Vacancies in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As with Positron Annihilation Spectroscopy
- Autorzy:
-
Tuomisto, F.
Slotte, J.
Saarinen, K.
Sadowski, J. - Powiązania:
- https://bibliotekanauki.pl/articles/2036028.pdf
- Data publikacji:
- 2003-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Ji
75.50.Pp
78.70.Bj - Opis:
- Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As$\text{}_{2}$ partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As$\text{}_{2}$ partial pressure.
- Źródło:
-
Acta Physica Polonica A; 2003, 103, 6; 601-606
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł