- Tytuł:
- High-Temperature Scanning Tunnelling Spectroscopy of Transition Metal Oxides
- Autorzy:
-
Klusek, Z.
Datta, P. K.
Kowalczyk, P.
Pierzgalski, S.
Busiakiewicz, A.
Olejniczak, W.
Basu, A.
Brinkman, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2036892.pdf
- Data publikacji:
- 2003
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.30.+h
73.20.At
72.80.Ga - Opis:
- In situ high-temperature scanning tunnelling spectroscopy measure-ments recorded on the heavily reduced TiO$\text{}_{2}$(110) surface which contains Ti$\text{}_{2}$O$\text{}_{3}$ regions showed disappearance of the energy gap accompanied by substantial decrease in amplitude of the band edge states with increasing temperature. It indicates smooth insulator-metal transition caused by bands overlap in Ti$\text{}_{2}$O$\text{}_{3}$, which takes place at elevated temperatures. In situ high-temperature scanning tunnelling microscopy and spectroscopy were used to study the influence of temperature on the electronic properties of Ni$\text{}_{x}$Mn$\text{}_{3-x}$O$\text{}_{3-δ}$ (0.4< x<1) thin films deposited by rf magnetron sputtering at three different oxygen/argon (2.5%, 10%, 15%) containing ambient. The morphology and distribution of the local density of states of the observed films did not show any difference for the films deposited at different conditions. The distribution of the local density of states was temperature dependent. The changes in the shape of the local density of states observed at 473 K were reversible with temperature implying that no permanent change of the electronic structure occurred.
- Źródło:
-
Acta Physica Polonica A; 2003, 104, 3-4; 245-258
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł