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    Wyświetlanie 1-10 z 10
    Tytuł:
    Van der Waals materials for HOT infrared detectors : a review
    Autorzy:
    Rogalski, Antoni
    Powiązania:
    https://bibliotekanauki.pl/articles/2063905.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    transition metal dichalcogenides photodetectors
    HgCdTe photodiodes
    high operating temperature infrared detectors
    Opis:
    In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe₂/MoS₂ and WS₂/HfS₂ heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
    Źródło:
    Opto-Electronics Review; 2022, 30, 1; art. no. e140551
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Corrigendum to “Van der Waals materials for HOT infrared detectors : a review” [Opto-Electronics Review 30 (2022) e140551]
    Autorzy:
    Rogalski, Antoni
    Powiązania:
    https://bibliotekanauki.pl/articles/2063909.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    transition metal dichalcogenides photodetectors
    HgCdTe photodiodes
    high operating temperature infrared detectors
    Źródło:
    Opto-Electronics Review; 2022, 30, 2; art. no. e141441
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Silicon-on-Insulator technology for imaging and application to a switching photodetector
    Autorzy:
    Abdo, N.
    Sallin, D.
    Koukab, A.
    Estribeau, M.
    Magnan, P.
    Kayal, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/397865.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    photodetectors
    silicon-on-insulator
    fotodetektory
    SOI
    Opis:
    This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for low light imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a resonant cavity, which is useful in application with a very narrow spectrum of interest, such as bioluminescence imaging. The SOI implementation of a switching photodetector based with an hybrid MOS-PN structure is presented and its advantages in terms of dark current minimization and SNR improvement highlighted.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2015, 6, 4; 136-141
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
    Autorzy:
    Martyniuk, P.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/201922.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    barrier detectors
    unipolar barrier
    nBn
    HgCdTe
    photodetectors
    Opis:
    The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818245.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818243.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Hu, Weida
    Powiązania:
    https://bibliotekanauki.pl/articles/1818250.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    HOT infrared detectors
    HgCdTe photodiodes
    p-i-n depleted photodiodes
    BLIP performance
    Opis:
    The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 2; 82--92
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Review of photodetectors characterization methods
    Autorzy:
    Bielecki, Zbigniew
    Achtenberg, Krzysztof
    Kopytko, Małgorzata
    Mikołajczyk, Janusz
    Wojtas, Jacek
    Rogalski, Antoni
    Powiązania:
    https://bibliotekanauki.pl/articles/2173660.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    photodetectors
    detector parameters
    photodetector characteristics
    measurements of detector parameters
    fotodetektor
    parametry detektora
    charakterystyka fotodetektora
    pomiary parametrów detektora
    Opis:
    The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors’ workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors’ works are described as well.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2022, 70, 2; art. no. e140534
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
    Autorzy:
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Kattner, Michael
    Frey, Philip
    Nelson, Scott A.
    Flick, Ryan
    Wu, Ying
    Liu, Amy W. K.
    Szymanski, Dennis E.
    Martinez, Becky
    Furlong, Mark J.
    Dennis, Richard
    Bundas, Jason
    Sundaram, Mani
    Powiązania:
    https://bibliotekanauki.pl/articles/2204213.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    focal plane arrays
    InAs/InAsSb
    photodetectors
    long wavelength infrared type-II superlattice
    metamorphic buffers
    superlattice period reduction
    Opis:
    Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
    Autorzy:
    Rogalski, A.
    Kopytko, M.
    Martyniuk, P.
    Hu, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/201444.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    colloidal quantum dot infrared photodetectors
    HOT infrared detectors
    HgCdTe photodiodes
    p-i-n depleted photodiodes
    BLIP performance
    Opis:
    In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 845-855
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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