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    Wyświetlanie 1-14 z 14
    Tytuł:
    Silicon-germanium for ULSI
    Autorzy:
    Hall, S.
    Eccleston, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/309304.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    silicon-germanium
    HBT
    SiGe-CMOS
    Opis:
    The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.
    Źródło:
    Journal of Telecommunications and Information Technology; 2000, 3-4; 3-9
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Artificial adaptive agent model characterized by learning and fairness in the ultimatum games
    Autorzy:
    Hayashida, T.
    Nishizaki, I.
    Katagiri, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/308565.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    oxidation
    kinetics
    modeling
    silicon
    silicon-germanium
    Opis:
    This paper examines the result of the experimental research on the ultimatum games through simulation analysis. To do so, we develop agent-based simulation system imitating the behavior of human subjects in the laboratory experiment by implementing a learning mechanism involving a concept of fairness. In our agent-based simulation system, mechanisms of decision making and learning are constructed on the basis of neural networks and genetic algorithms.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 4; 36-44
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxidation kinetics of silicon strained by silicon germanium
    Autorzy:
    Grabowski, J.
    Beck, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308659.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    oxidation
    kinetics
    modeling
    silicon
    silicon-germanium
    Opis:
    This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 30-32
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region
    Autorzy:
    Durlin, Quentin
    Aliane, Abdelkader
    André, Luc
    Kaya, Hacile
    Cocq le, Mélanie
    Goudon, Valérie
    Vialle, Claire
    Veillerot, Marc
    Hartmann, Jean-Michel
    Powiązania:
    https://bibliotekanauki.pl/articles/2204221.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    germanium (Ge)
    photodiode
    shortwave infrared detector
    Opis:
    Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 10⁷ cmˉ² are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at -0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 μm diameter photodiodes is in the 5-20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 μm, respectively, is demonstrated with a 1.8 μm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 μm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144550
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low frequency noise in Si and Si/SiGe/Si PMOSFETs
    Autorzy:
    Thomas, S. M.
    Prest, M. J.
    Fulgoni, D. J. F.
    Bacon, A. R.
    Grasby, T. J.
    Leadley, D. R.
    Parker, E. H. C.
    Whall, T. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/308779.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    electronic noise
    silicon-germanium heterostructures
    MOSFET
    dynamic threshold mode
    Opis:
    Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 64-68
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Behavior of gallium and germanium associated with zinc sulfide concentrate in oxygen pressure leaching
    Autorzy:
    Liu, F.
    Liu, Z.
    Li, Y.
    Wilson, B. P.
    Lundstrom, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/110812.pdf
    Data publikacji:
    2017
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    zinc sulfide concentrate
    gallium
    germanium
    pyrite
    oxygen pressure leaching
    Opis:
    The Fankou zinc concentrate (Guangdong province, China) was mineralogically characterized and results showed that the main germanium-bearing minerals in the sample comprised of zinc sulfide and galena, whereas gallium-bearing minerals were pyrite, sphalerite and silicate. Oxygen pressure leaching of zinc sulfide concentrate was carried out in order to investigate the effect of pressure, leaching time, sulfuric acid and copper concentrations on the leaching behavior of gallium and germanium. Under optimum conditions, leaching of Zn, Fe, Ge and Ga reached 98.21, 90.45, 97.45 and 96.65%, respectively. In the leach residues, it was determined that some new precipitates, such as PbSO4, CaSO4 and SiO2, were formed, which co-precipitated a certain amount of Ga and Ge from the leach solution. The results clearly indicated that Ga and Ge were much more difficult to leach than Zn, and provided answers to why the leaching efficiency of Ga is 10% lower when compared to Ge.
    Źródło:
    Physicochemical Problems of Mineral Processing; 2017, 53, 2; 1047-1060
    1643-1049
    2084-4735
    Pojawia się w:
    Physicochemical Problems of Mineral Processing
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Unique trace element geochemistry of pyrometamorphic apatite-supergroup minerals : a case study of fluorellestadite from burnt coal (Poland) and shale (France) post-mining waste heaps, with emphasis on boron, germanium, aluminium and titanium
    Autorzy:
    Kruszewski, Łukasz Sewweryn
    Sláma, Jiří
    Deput, Ewa
    Powiązania:
    https://bibliotekanauki.pl/articles/27323280.pdf
    Data publikacji:
    2023
    Wydawca:
    Państwowy Instytut Geologiczny – Państwowy Instytut Badawczy
    Tematy:
    apatite supergroup
    non-nominal ion substitution
    boron
    germanium
    titanium
    tetrahedra
    Opis:
    Apatite-type structure is known for its flexibility towards accommodating numerous ions of different crystallographic affinities. Two samples of fluorellestadite from two pyrometamorphic rocks (slags) from burned waste heaps (BWH) from France (LdS) and Poland (RDT) were studied in terms of their trace element composition using Laser Ablation Inductively Coupled Plasma Mass Spectrometry. Boron shows an evident, persistent enrichment in both the samples, with average/maximum levels of 497/1040 and 49/106 ppm, respectively. So is true for magnesium (884/16766 and 404/6251 ppm, i.e., respectively) and sodium (512/697 and 249/370 ppm, respectively). Germanium is clearly enriched in the first sample (29/40 ppm) and, to a lesser degree, in the second one (34 ppm on average). The LdS sample is also clearly enriched in Al (888/1238 ppm), K (385/697 ppm), Ti (515/943 ppm), V (172/347 ppm), and Cu (16/1369 ppm). The RDT sample is also rich in As (105/120 ppm) and Sr (1072/6592 ppm). An interesting feature of both samples concerns their REE pattern: Nd is the dominant element of the group, with the respective Nd/ΣLREE and Nd/(Ce+La) values of 0.43 and 0.90; and 0.37 and 0.66. In order from highest to lower average concentrations, aluminium, magnesium, titanium, boron, potassium, and germanium may be essential substituents in the BWH apatites.
    Źródło:
    Geological Quarterly; 2023, 67, 1; art. no. 7
    1641-7291
    Pojawia się w:
    Geological Quarterly
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Facilitated transport of germanium from acidic medium through supported liquid membrane using Cyanex 301 as mobile carrier
    Autorzy:
    Kamran Haghighi, Hossein
    Irannajad, Mehdi
    Moradkhani, Davood
    Powiązania:
    https://bibliotekanauki.pl/articles/110625.pdf
    Data publikacji:
    2019
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    germanium
    supported liquid membrane
    Cyanex 301
    mass transfer model
    acidic medium
    Opis:
    In this research, a flat sheet supported liquid membrane (FSSLM) system was used to transfer germanium from the acidic medium. The poly-tetra fluoro ethylene (PTFE) membrane filter with the hydrophobic nature and Cyanex 301 were selected as the support and the mobile carrier, respectively. The influence of various parameters being pH of the feed solution (1.5-5), germanium concentration (10-40 mg/dm3), carrier concentration in the solid membrane (10-40 vol%), and sulfuric acid concentration of the receiving phase (100-400 g/dm3) was investigated on the transport of germanium. Under the optimum condition being pH of 1.5, the germanium concentration of 40 mg/dm3, the carrier concentration of 1.18 mol/dm3, and the sulfuric acid concentration of 400 g/dm3, a mass transfer model was developed. Based on this model, the transport mechanism, diffusion of species to the feed-membrane interface, the chemical reaction of species and Cyanex 301, and diffusion of germanium-Cyanex 301 complexes across SLM were explained. According to the obtained model, the values of 6.57 and 738.6 s/cm were achieved for the aqueous and organic diffusion resistances, respectively.
    Źródło:
    Physicochemical Problems of Mineral Processing; 2019, 55, 1; 225-236
    1643-1049
    2084-4735
    Pojawia się w:
    Physicochemical Problems of Mineral Processing
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Addition of Germanium to the Surface Phenomena in Silver Alloys
    Autorzy:
    Jesiotr, M.
    Trzaskowski, W.
    Trochimiak, D.
    Nawrocki, P.
    Łukasik, K.
    Myszka, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/382325.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    silver
    germanium
    microstructure
    oxide layers
    corrosion
    srebro
    german
    mikrostruktura
    warstwa tlenku
    korozja
    Opis:
    The article describes the impact of germanium on the course of surface phenomena in casting alloys of silver used in gold smithing. The aim of this works is to describe the assessment of resulting alloys, comparing the area of raw castings and the impact of the addition content of the alloy on the hardness of the samples. The evaluation also was subject to corrosion resistance of giving a comparison of their use in relations to traditional silver alloys.
    Źródło:
    Archives of Foundry Engineering; 2018, 18, 3; 81-85
    1897-3310
    2299-2944
    Pojawia się w:
    Archives of Foundry Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Geochemistry of germanium in thermal waters of the Jelenia Góra geothermal system (Sudetes, Poland) : solute relationships and aquifer mineralogy
    Autorzy:
    Dobrzyński, Dariusz
    Tetfejer, Klaudia
    Stępień, Marcin
    Karasiński, Jakub
    Tupys, Andrii
    Słaby, Ewa
    Powiązania:
    https://bibliotekanauki.pl/articles/24459856.pdf
    Data publikacji:
    2023
    Wydawca:
    Polskie Towarzystwo Geologiczne
    Tematy:
    Germanium
    groundwater geochemistry
    geothermal water
    granite geochemistry
    Karkonosze Granite
    Jelenia Góra geothermal system
    Opis:
    A long-term (2004–2021) study of the chemical composition of thermal waters in the Jelenia Góra geothermal system provided information on a wide set of components. The subject of the present study is the geochemistry of germanium (Ge), which occurs in concentrations ranging from 2.7 to 6.3 μg/L in the waters studied. Interpretation of a set of 46 chemical analyses identified relationships between germanium and other elements in thermal waters from individual intakes. In the old thermal waters of Cieplice and Karpniki of deep circulation, germanium is derived from silicates and its concentration is controlled by the solubility of Ge-bearing quartz with an average Ge content of 1.5 μg/g. The source of germanium in the deep old thermal water at Staniszów is mainly sulphides, most likely arsenopyrite, but the secondary contribution of Ge from silicates (biotites, amphiboles) should not be ignored. The mineral phase, responsible for controlling Ge activity in this water, cannot yet be identified. The shallow thermal waters at Cieplice, which are a mixture of old thermal waters and modern waters, differ from the deep waters. Germanium in shallow waters probably is derived from silicates, but owing to mixing, there are no chemical equilibrium conditions; the concentration of Ge is determined by the dynamic equilibrium of the mixed water components. The modern water of intake no. 2 (Cieplice) differs from other shallow waters and also shows similarities to the Staniszów water. The germanium in the no. 2 water probably comes mainly from ferromagnesian minerals (biotite, amphiboles), although the influence of sulphides cannot be excluded. The relationships of germanium to other elements, including the Ge/Si ratio, appear to be effective indicators of hydrogeochemical conditions. Thermal waters from the different locations show both similarities and differences in chemical composition,especially of minor and trace components. At the present, still weak stage of recognition, the Jelenia Góra geothermal system can be treated as an area of occurrence of local systems responsible for the quantity and quality of thermal waters in individual intakes.
    Źródło:
    Annales Societatis Geologorum Poloniae; 2023, 93, 3; 323--344
    0208-9068
    Pojawia się w:
    Annales Societatis Geologorum Poloniae
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Estimation of acoustically induced refractive index perturbation in silicon and germanium slab for optical applications
    Autorzy:
    Sharma, G.
    Kumar, S.
    Kumar, D.
    Singh, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/173371.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    dispersion relation
    Lamb wave mode in silicon and germanium
    displacement field
    refractive index modulation
    Opis:
    In-plane displacement field and refractive index variation for silicon and germanium in the presence of Lamb wave is estimated for optical applications. The required dispersion equation in a thin silicon and germanium plates is obtained using the method of potentials with boundary conditions involving the bulk and surface stress of the materials considered. The eigen-values thus obtained are used to compute the Lamb wave modes for the slab of silicon and germanium at same thickness. The fundamental anti-symmetric and symmetric plate modes and their overtones are observed due to confinement of acoustic energy within the slab thickness. In addition, the excited symmetric modes in silicon have longer wavelengths than those of germanium at a fixed frequency. Therefore, the refractive index modulation through the Lamb wave in silicon is always larger as compared to that of germanium. This refractive index modulation can be treated as periodic sinusoidal refractive index variation and may be considered as a tunable one-dimensional photonics crystal.
    Źródło:
    Optica Applicata; 2015, 45, 4; 491-500
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin film hybrid structures perovskite and silicon photovoltaic cells
    Autorzy:
    Kołodziej, A.
    Kołodziej, M.
    Kołodziej, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/93172.pdf
    Data publikacji:
    2018
    Wydawca:
    Państwowa Wyższa Szkoła Zawodowa w Tarnowie
    Tematy:
    thin films
    multijunction solar cells
    nanostructure
    silicon
    germanium
    perovskite
    cienka warstwa
    wielofunkcyjne ogniwo słoneczne
    nanostruktura
    krzem
    german
    perowskit
    Opis:
    The world economy needs new breakthrough in the technological and material efficiency and costs in the manufactured solar cells. The authors present new studies on triple junction photo voltaic structures using nano-technological solutions. The system of the amorphous a-Si:H sandwich with the scattered light particles, the plasmonic nano Si in the a-Si:H matrix structure and the silicon-germanium sandwich on the multi ZnO layer electrode- reflector was made and studied in detail.
    Źródło:
    Science, Technology and Innovation; 2018, 2, 1; 27-30
    2544-9125
    Pojawia się w:
    Science, Technology and Innovation
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Challenges for 10 nm MOSFET process integration
    Autorzy:
    Östling, M.
    Malm, B. G.
    Haartman, M.
    Hallstedt, J.
    Zhang, Z.
    Hellström, P. E.
    Zhang, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/309004.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    sstrained silicon
    silicon-germanium
    silicon-on-insulator (SOI)
    high-k dielectrics
    hafnium oxide
    nanowire
    low frequency noise
    mobility
    metal gate
    Opis:
    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 25-32
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Development of hydrogen-enriched water gas production technology by processing Ekibastuz coal with technogenic waste
    Autorzy:
    Dikhanbaev, B.
    Dikhanbaev, A. B.
    Sultan, I.
    Rusowicz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/140012.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    hydrogen-enriched water gas
    reactor of inversion phase–rotary kiln–gas generator
    cupreous cast iron
    zinc-germanium containing sublimates
    gaz wodny wzbogacony wodorem
    reaktor fazy inwersyjnej-pieca obrotowego-generatora gazu
    żeliwo miedziowe
    sublimaty zawierające cynk-german
    Opis:
    In the dumps of metallurgical enterprises of Kazakhstan about 700 million tons of waste products are generated annually, and are polluting the atmosphere and the soil. The concentration of valuable components in waste products are no lower than in natural resources. The reserves of coal in the Ekibastuz basin are estimated to be more than a billion tons, and almost half of this is made up of ash. Every year, up to 30 million tons of ash-cinder waste is generated, which presents a serious threat to nature. Gallium and germanium concentrations in dumps are approximately 200 grams per ton, which is comparable to the content in coal before processing. The current research aims at creating a unit to obtain hydrogen-enriched water gas from Ekibastuz coal, with the production of zinc, gallium and germanium sublimates, copper-containing cast iron, slag wool and cast stone, through the joint processing of zinc-rich slag and ash-cinder wastes from thermal power plants. To achieve this, we used previous methods of extreme energy saving and a new method, the smelt layer with inversion phase. Experimental results from the “reactor inversion phase – rotary kiln” (RIPh) unit, which processed zinc-germanium contained slag, showed the potential to extract germanium from zinc sublimates, to reduce iron to the form of cupreous cast iron, and to obtain combustible gases and smelt suitable for slag-wool production. Calculations performed on the joint processing of Ekibastuz coal and zinc-rich slag using the proposed unit“ reactor of inversion phase–rotary kiln–gas generator” showed it can obtain hydrogen-enriched watergas, along with the extraction of valuable components of primary raw material.
    Źródło:
    Archive of Mechanical Engineering; 2018, LXV, 2; 221-231
    0004-0738
    Pojawia się w:
    Archive of Mechanical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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