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Wyświetlanie 1-15 z 28
Tytuł:
Diffraction of Light by Finite Amplitude Ultrasonic Waves
Autorzy:
Adler, L.
Powiązania:
https://bibliotekanauki.pl/articles/1377935.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.25.Ba
43.35.Sx
Opis:
In the late 1950s the Ultrasonic Group at Michigan State University introduced light diffraction to study distortion of ultrasonic waves in liquids under the direction of Prof. Egon Hiedemann. In this paper some results of these studies will be presented with detailed description of the author's measurements of B/A. The rate at which the harmonics are developed (the wave distortion is an indication of the harmonics present) during the propagation of the initially sinusoidal ultrasonic wave depends on the nonlinearity of the medium. The light which is diffracted by the distorted wave results in asymmetric pattern contrary to the Raman-Nath theoretical prediction. From the light intensity measurements due to the generated second harmonics - filtered out by a metal plate - the nonlinearity parameter B/A was determined. Developments in studying finite amplitude standing ultrasonic waves in a liquid filled cavity will be also discussed. Using light diffraction measurements it was observed that above a threshold amplitude, fractional harmonics of the driver transducer are also generated in addition to the generated harmonics. It was recently observed that above a second threshold value of the driver amplitude the system undergoes chaotic behavior. Further increase of the driver amplitude returns the system from chaos to stable oscillation.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 5-9
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Position Control of a Turret Using LabVIEW
Autorzy:
Saygin, A.
Rashid, A.
Powiązania:
https://bibliotekanauki.pl/articles/1031731.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Sx
07.07.Tw
Opis:
Servo motors are commonly used for axial motion control of gun turrets. In this study, horizontal and vertical position control around two axes of motion of a gun turret was realized using LabVIEW software. Communication with Siemens s7-300 CPU315-2 PN/DP PLC has been realized using KEPServerEX software and using OPC tools in LabVIEW. KEPServerEX software was used to transfer motor control and status data between the PC and PLC. PLC was used to control the AC servo drivers using ProfiBUS protocol, in accordance with commands sent from LabVIEW. Servo motors with connected S110 CU305DP servo drivers have been controlled according to control data received from the PLC. Scout software was used for uploading communication and position commands and for changing factory defaults of AC servo drivers. Furthermore, status control and input of commands have been realized using a touch panel. All PLC and touch panel programming have been performed on TIAPortal V13SP1. Thus, the position control of gun turret has been provided using both, PC and the touch panel.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 970-973
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface Mixing in Fe/Si Multilayers Observed by the In Situ Conductance Measurements
Autorzy:
Chomiuk, P.
Błaszyk, M.
Szymański, B.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1810582.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.50.-h
Opis:
In this contribution the in situ conductance vs. deposition time dependences of Fe/Si multilayers are analysed. The plot of resistance multiplied by the square of the thickness as a function of iron thickness shows that during the iron deposition initially amorphous-like Fe-Si mixture is formed, next the mixture crystallises, and finally bcc-Fe phase appears. The interface mixing is also manifested by the reduction of the total multilayer thickness measured by small angle X-ray diffraction.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 355-356
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Real-Time Acousto-Optic Visualization of Ultrasonic Pulses in $TeO_2$
Autorzy:
Polishko, O.
Yurchenko, A.
Pilgun, Y.
Smirnov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1383783.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.20.Gp
43.35.Sx
Opis:
The ultrasonic beam features in ultrasonic and acousto-optic devices have a great impact on their characteristics and need to be studied. In the current work, a conventional optical visualization technique was extended to include spatial filtration of the light diffraction pattern and stroboscopic illumination of a unit under test. That enabled very weak light responses from ultrasonic waves to be observed. This technique was applied to studying propagation and reflection of ultrasonic pulses in the $TeO_2$ crystal, a body of the total internal reflection ultrasonic sensor. Analysis of visualization data has revealed an unexpected conversion of the shear horizontal wave radiated by the transducer into a longitudinal one on its normal reflection from the (001) face of the crystal, which is inexplicable as far as the plane wave theory is concerned. This finding requires further research to be confirmed and explained.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 132-134
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide-copper
Autorzy:
Rówiński, E.
Pławecki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1075639.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
73.50.Pz
73.40.Sx
Opis:
Cuprous (I) oxide (Cu₂O)-based solar cells were fabricated with the use of the electrodeposition technique at nanometre-scale, and the structural, morphological and electrical properties were investigated. The Cu₂O layers were electrodeposited on crystalline and polycrystalline copper substrates. To complete the Cu₂O/Cu(100) and Cu₂O/Cu interfaces as the solar cells the top electrodes of silver paste were painted on the rear of Cu₂O. The microscopic analysis exhibits uneven surface morphologies of a Cu₂O film with the roughness of 92.5 nm, while the X-ray diffraction analysis reveals that the layers are Cu₂O-type polycrystalline structures with the thickness of 493 nm and the crystallite size of 69.8(6) nm. The theoretical analysis of the current-voltage curve was provided to determine the values of electrical parameters of the most efficient solar cell of Ag/Cu₂O/Cu(100) and clearly indicate presence of two Schottky barriers at interfaces.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1141-1143
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acousto-Optic Diffraction by Shear Horizontal Surface Acoustic Waves in 36° Rotated Y-Cut X-Propagation Lithium Tantalate
Autorzy:
Rimeika, R.
Čiplys, D.
Shur, M.
Powiązania:
https://bibliotekanauki.pl/articles/1383242.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.65.Dq
43.35.Sx
78.20.hb
Opis:
We have investigated the acousto-optic diffraction by shear horizontal surface acoustic waves in 36° rotated Y-cut X-propagation lithium tantalate ($LiTaO_3$) crystals. The measurements were performed at the optical wavelength 633 nm of He-Ne laser and acoustic wavelengths of 50-60 μ m. The anisotropic diffraction with the light polarization rotation in the transmission mode was observed. The measured and calculated values of the light incidence angle corresponding to the strongest diffraction differed significantly. A narrow strip of a thin metal film deposited on the crystal surface drastically affected the light diffraction. We attribute these effects to the conversion processes between the shear horizontal leaky surface acoustic wave and shear horizontal surface skimming bulk wave.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 52-54
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
In Situ Conductance of Fe/Si and Fe/Ge Multilayers
Autorzy:
Chomiuk, P.
Błaszyk, M.
Luciński, T.
Wróblewski, M.
Susła, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813491.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.50.-h
75.70.Cn
Opis:
In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 657-662
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
Autorzy:
Wang, H. Y.
Weng, H. M.
Ling, C. C.
Ye, B. J.
Zhou, X. Y.
Han, R. D.
Powiązania:
https://bibliotekanauki.pl/articles/2043365.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
68.35.Ct
73.40.Sx
Opis:
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 874-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si
Autorzy:
Riesz, F.
Vo van, Tuven
Varrio, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933966.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.Gz
73.50.Pz
73.40.Sx
Opis:
Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 889-892
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors
Autorzy:
Cola, A.
Nabet, B.
Chen, X.
Quaranta, F.
Powiązania:
https://bibliotekanauki.pl/articles/2041621.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
73.40.Sx
06.60.Jn
Opis:
In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 14-25
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zinc oxide/cuprous(I) oxide-based solar cells prepared by electrodeposition
Autorzy:
Pławecki, M.
Rówiński, E.
Mieszczak, Ł.
Powiązania:
https://bibliotekanauki.pl/articles/1075675.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
73.50.Pz
73.40.Sx
Opis:
The aim of this research was to fabricate zinc oxide/cuprous(I) oxide-based heterojunction solar cells with the use of electrodeposition methods, and further to investigate their structures and photovoltaic properties. The ZnO and Cu₂O were used as n- and p-type semiconductors, respectively, to fabricate photovoltaic devices based on Ag/ZnO/Cu₂O/Cu(100) heterojunction structures. The crystallite sizes of ZnO and Cu₂O were determined to be 25.4(3) nm and 69.8(6) nm, respectively. It was pointed out that efficiencies of the solar cells can be gradually adjusted, using different thicknesses of Cu₂O layers, to achieve values as high as 2.7%. The standard diode model and high device performance provide new insights into the issue, outlining guidelines for high-performance solar cells and suggesting that a metal-n-type semiconductor-p-type semiconductor nanostructure-crystal layered, sandwiched-type architecture is a promising platform: to boost the efficiency.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1144-1146
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Dependent Fano Resonances in a Rashba System with Coulomb Interactions
Autorzy:
Stefański, P.
Powiązania:
https://bibliotekanauki.pl/articles/2048075.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
72.25.Dc
73.40.Sx
Opis:
The effects of interplay of interference of quantum mechanical electron waves and their mutual Coulomb interactions are investigated in the device composed of interacting quantum dot attached to polarized leads via quantum point contacts with the Rashba interaction. The Zeeman-split dot sub-levels form two interfering channels and as a result spin dependent Fano resonances arise in the conductance through the system. The Coulomb repulsion between the channels modifies the width and shape of the Fano resonances as compared to the non-interacting case. We formulate the Fano expression dependent on the dot's occupancy regulated by the Coulomb interactions.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 644-647
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Utilization of Digital Processing of the Optical Scanning Field View for Tip-Sample Distance Estimation during the Approach Procedure
Autorzy:
Sikora, A.
Bednarz, Ł.
Powiązania:
https://bibliotekanauki.pl/articles/1807509.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Sx
07.05.Pj
07.79.-v
Opis:
In this article we present the method of determining the tip-sample distance using advanced data processing of scanning field's optical picture. This feature can reduce both: the approach process time and the risk of damaging the tip or the sample. Experimental results will be also presented.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-99-S-101
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Acoustic Anisotropy on Frequency Bandwidths of Bragg Diffraction in Two Orthogonally Polarized Diffraction Orders
Autorzy:
Zakharov, A.
Voloshinov, V.
Powiązania:
https://bibliotekanauki.pl/articles/1383297.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Fx
42.79.Jq
43.35.Sx
Opis:
This paper theoretically and experimentally examines a specific regime of acousto-optic diffraction during which an arbitrarily polarized incident light in a paratellurite crystal is scattered simultaneously into two orthogonally polarized diffraction maxima. We examined acoustic energy walk-off in the crystal and its influence on phase matching as well as on distribution of light energy between the two diffraction orders. This influence was theoretically considered by means of wave vector diagrams illustrating momentum conservation law during the photon-phonon interaction. We obtained expressions for mismatch parameters in the ordinary +1 and extraordinary -1 diffraction orders both depending on the walk-off angle. The obtained parameters were used in the Raman-Nath system of coupled-wave equations to calculate the diffracted light intensities and frequency bandwidths of diffraction. We measured the bandwidths in experiments carried out in the (11̅0) plane of paratellurite crystal at the walk-off angle equal to 54°.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 63-65
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acousto-Optical Tunable Transmissive Grating Beam Splitter
Autorzy:
Dieulangard, A.
Kastelik, J.
Dupont, S.
Gazalet, J.
Powiązania:
https://bibliotekanauki.pl/articles/1383325.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.hb
42.79.Jq
43.35.Sx
Opis:
We present a tunable transmissive grating beam splitter for multiple laser line separation based on acousto-optic interaction in tellurium dioxide. Acousto-optic devices are well known for light modulation, frequency shifting, filtration or deflection. Unlike the classical operating modes of acousto-optic devices, we consider the simultaneous diffraction of several optical wavelengths by a single ultrasonic frequency. The device is based on the Bragg anisotropic interaction in the specific "tangent phase matching" configuration. The acousto-optic interaction takes place with a single ultrasonic frequency and the diffraction efficiency remains high over a wide optical spectral range. The different diffracted beams are then angularly well separated, due to the slow velocity of the ultrasonic wave propagating in tellurium dioxide. The optical bandwidth is directly related to the operating ultrasonic frequency. Numerical calculations were carried out to determine the main parameters of the device: operating ultrasonic frequency, optical bandwidth, tunability range, crystalline cut and transducer length. A practical device has been designed for visible spectrum. Experimental results are presented as for example a spectral bandwidth from 450 nm to 550 nm with a carrier frequency $f_0$=125 MHz.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 66-68
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 28

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