Temat: MOVPE - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: MOVPE InP based material for millimeter and submillimeter wave generation and amplification
Autorzy:: Strupiński, W.
Kosiel, K.
Jasik, A.
Jakieła, R.
Jeleński, A.
Kollberg, E.
Dillner, L.
Nawaz, M.
Powiązania:: https://bibliotekanauki.pl/articles/308777.pdf
Data publikacji:: 2002
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: epitaxy InP
MOVPE
microwave generation
Opis:: The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.
Źródło:: Journal of Telecommunications and Information Technology; 2002, 1; 8-10
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
Autorzy:: Wosko, M
Paszkiewicz, B
Paszkiewicz, R
Tlaczala, M
Powiązania:: https://bibliotekanauki.pl/articles/174100.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: AlGaN/GaN
heterostructure
AlN spacer
MOVPE
Opis:: AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobility of two-dimensional electron gas (2DEG) is the alloy and interface roughness scattering mechanism occurring at the heterointerface. Mathematical calculations of a wave-function of 2DEG in the channel show that theses two phenomena play an important role, due to the fact that some electrons in 2DEG can migrate into AlGaN barrier and be strongly dissipated. One of the proposed solutions against alloy scattering in the buffer layer is the use of thin AlN spacer at the heterointerface between AlGaN and GaN layers. AlN layer enhances the conduction band offset due to a polarization-induced dipole in the AlN layer, and therefore increases carrier confinement. Several Al0.18GaN0.82/AlN/GaN heterostructures with different AlN spacer layer thickness were grown by MOVPE method for studies of the Hall mobility and sheet carrier concentration of 2DEG. Hall measurements performed using Van der Pauw shown mobility maximum at nominally 1.3 nm AlN spacer thickness and almost linear dependence of sheet carrier concentration with AlN spacer thickness in the range from 0.7 to 2 nm.
Źródło:: Optica Applicata; 2013, 43, 1; 61-66
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications
Autorzy:: Badura, Mikołaj
Powiązania:: https://bibliotekanauki.pl/articles/226294.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: MOVPE technology
optoelectronics
quantum cascade lasers
epitaxy
Opis:: Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 2; 389-394
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
Autorzy:: Łozińska, Adriana
Badura, Mikołaj
Bielak, Katarzyna
Ściana, Beata
Tłaczała, Marek
Powiązania:: https://bibliotekanauki.pl/articles/174236.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: photoluminescence
quantum cascade lasers
MOVPE
metalorganic vapour phase epitaxy
Opis:: In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In_0.53Ga_0.47As/Al_0.48In_0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.
Źródło:: Optica Applicata; 2020, 50, 2; 251-256
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
Autorzy:: Dawidowski, W.
Ściana, B.
Zborowska-Lindert, I.
Mikolásek, M.
Latkowska, M.
Radziewicz, D.
Pucicki, D.
Bielak, K.
Badura, M.
Kováč, J.
Tłaczała, M.
Powiązania:: https://bibliotekanauki.pl/articles/226630.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: dilute nitrides
AP MOVPE
subcell
tandem solar cell
J-V characteristics
Opis:: Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 2; 151-156
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Growth and properties of ZnO films grown using pa-movpe with DMZn and N2O
Autorzy:: Nakano, T.
Nishimoto, K.
Sumiya, M.
Fuke, S.
Powiązania:: https://bibliotekanauki.pl/articles/385163.pdf
Data publikacji:: 2009
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:: ZnO
PA-MOVPE
epitaxial growth
DMZn
N2O
temperature modulation growth
Opis:: ZnO films were grown by plasma-assisted metal organic vapor phase epitaxy (PA-MOVPE) using dimethylzinc (DMZn) and N O gases. The crystallinity and surface morphology of ZnO films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallinity of ZnO improved (a) when the N2O flow rate was increased, because vapor phase reaction was suppressed while surface migration was enhanced, and (b) when the growth temperature was increased, because surface diffusion was enhanced. In the PA-MOVPE method with N2O gases and DMZn, both the N2O flow rate and crystal growth temperature strongly affected the crystallinity of ZnO films.
Źródło:: Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 124-126
1897-8649
2080-2145
Pojawia się w:: Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications
Autorzy:: Badura, M.
Bielak, K.
Ściana, B.
Radziewicz, D.
Pucicki, D.
Dawidowski, W.
Żelazna, K.
Kudrawiec, R.
Tłaczała, M.
Powiązania:: https://bibliotekanauki.pl/articles/173549.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: InGaAs
AlInAs
superlattice
metalorganic vapour phase epitaxy
MOVPE
quantum cascade laser
QCL
Opis:: Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed.
Źródło:: Optica Applicata; 2016, 46, 2; 241-248
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

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