- Tytuł:
- Prospects and Development of Vertical Normally-off JFETs in SiC
- Autorzy:
- Bakowski, M.
- Powiązania:
- https://bibliotekanauki.pl/articles/308249.pdf
- Data publikacji:
- 2009
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
JFET cascode
normally-off
SiC
vertical JFET - Opis:
- This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is compared in terms of blocking voltage, specific on-state resistance, maximum output current density and switching performance in the temperature range from 25 C degree to 250 C degree. The main objective of the analysis is to ascertain consequences of different design and technology options for the total losses and high temperature performance of the devices.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2009, 4; 25-36
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł