- Tytuł:
- Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
- Autorzy:
-
Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A. - Powiązania:
- https://bibliotekanauki.pl/articles/226802.pdf
- Data publikacji:
- 2014
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation - Opis:
- The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł