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Tytuł:
Investigation of Structural and Optical Properties of GDC Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Sakaliūnienė, J.
Čyvienė, J.
Abakevičienė, B.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503905.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.40.Tv
Opis:
The purpose of this paper was to analyze structural and optical properties of gadolinia-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{1.95}$) thin films. At first the ceria-gadolinia multilayer sandwich systems (4-12 layers) were deposited using reactive magnetron sputtering in the $O_2$/Ar gas mixtures. The films were formed with ≈ 90% ceria and ≈ 10% gadolinia. The GDC thin films deposited on Si (111) substrate were annealed at 600°C for 1 h in air. The thickness of the formed GDC multilayer systems was about 600 nm. The GDC thin film microstructure was investigated by X-ray diffraction and scanning electron microscopy. The texture coefficient $T_{c(hkl)}$ of GDC films was evaluated from the X-ray diffraction patterns. The crystallite size of GDC films was estimated from the Scherrer equation. Optical properties of the annealed GDC thin films were examined using a laser ellipsometer. The results show that the number of layers has the influence on GDC thin film formation. As follows from the analysis of structural and optical properties of GDC 12 layer system annealed at 600°C for one hour in air has the highest refractive index n = 2.17.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 63-65
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Reactive Gaseous Flow Rate and Composition on the Optical Properties of $TiO_2$ Thin Films Deposited by Dc Magnetron
Autorzy:
Stamate, M.
Lazar, G.
Nedeff, V.
Lazar, I.
Caraman, I.
Rusu, I.
Rusu, D.
Powiązania:
https://bibliotekanauki.pl/articles/1808135.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.40.Tv
Opis:
In the paper there are shown the changes in optical properties of $TiO_2$ thin films prepared by dc magnetron sputtering at different gas flow rates. We found that there is a drastic change in optical properties such as optical transmission, refractive index, extinction coefficient and optical band gap with the gaseous flow rate and composition. We observed an improvement in optical properties of the films that had been deposited at higher gaseous flow rate and at a certain gaseous composition.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 755-757
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties
Autorzy:
Luhin, V.
Zharsky, I.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400440.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
73.50.-h
Opis:
In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of $In_2O_3$ films formation with high selectivity and sensitivity to $NO_2$, and $NH_3$ are established.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 837-839
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Development of Giant Magnetoresistance Material Based on Cobalt Ferrite
Autorzy:
Djamal, M.
Ramli, -
Khairurrijal, -
Haryanto, F.
Powiązania:
https://bibliotekanauki.pl/articles/1401971.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.De
81.15.Cd
Opis:
This paper describes an experimental study on development of giant magnetoresistance material based on cobalt ferrite (CoFe₂O₄). We have successfully developed a new giant magnetoresistance material based on CoFe₂O₄ i.e; sandwich (CoFe₂O₄/CuO/CoFe₂O₄), spin valve (FeMn/CoFe₂O₄/CuO/CoFe₂O₄), and organic giant magnetoresistance (CoFe₂O₄/Alq₃/CoFe₂O₄) using dc-opposed target magnetron sputtering method. Crystalline structure and morphology of thin films were characterized by X-ray diffraction and scanning electron microscope. The electrical properties were characterized using a four-point probe and magnetic properties were characterized using a vibrating sample magnetometer. In sandwich structure, the giant magnetoresistance ratio maximum are found at room temperature in CoFe₂O₄/CuO/CoFe₂O₄ thin film is 70% when CoFe₂O₄ and CuO layer thickness are 62.5 nm and 14.4 nm, respectively. The maximum of giant magnetoresistance ratio of the spin valve structure obtained is 32.5% at FeMn layer thickness of 45 nm. Meanwhile, in organic giant magnetoresistance the maximum value of the giant magnetoresistance ratio are approximately 35.5% at room temperature.
Źródło:
Acta Physica Polonica A; 2015, 128, 2B; B-19-B-22
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of PbTiO₃ Thin Films by Annealing Multilayer Oxide Structures in Vacuum
Autorzy:
Iljinas, A.
Stankus, V.
Powiązania:
https://bibliotekanauki.pl/articles/1398677.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.55.-a
Opis:
This article presents investigation of syntheses of perovskite PbTiO₃ thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum $(p=5 \times 10^{-3} Pa)$. The film stoichiometry was accurately controlled by the deposition of individual layers with the required ( ≈1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670°C and 770°C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300°C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO₃ phase with tetragonality c/a=1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670°C temperature.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 121-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis of Nickel-Doped TiO₂ Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures
Autorzy:
Hojabri, A.
Adavi, M.
Hajakbari, F.
Powiązania:
https://bibliotekanauki.pl/articles/1033459.pdf
Data publikacji:
2017-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.20.Fw
81.07.-b
81.15.cd
Opis:
Titanium oxide (TiO₂) and nickel-doped TiO₂ thin films were deposited onto glass substrates by reactive DC magnetron sputtering technique at different oxygen contents. Then, prepared films were annealed at temperatures of 300 and 500°C. Influence of O₂/Ar ratio, nickel doping and annealing temperature on structural, morphological and optical properties of TiO₂ thin films were studied and discussed. The XRD analysis results have confirmed the amorphous nature of the films. The results show that increase of annealing temperature and oxygen content in argon-oxygen gas mixture have lead to an increase of films transparency. By doping the TiO₂ with nickel the optical band gap energy has slightly decreased. AFM analysis results have shown that the surface morphology of films is effectively influenced by annealing temperature.
Źródło:
Acta Physica Polonica A; 2017, 131, 3; 386-388
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures
Autorzy:
Hajakbari, F.
Taheri Afzali, M.
Hojabri, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033487.pdf
Data publikacji:
2017-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Tv
81.07.Bc
81.15.cd
Opis:
In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the optical band gap energy decreases from 3.62 to 3.38 eV by increasing the annealing temperature from 400°C to 600°C. The AFM and SEM results show that the annealing temperature effectively influences the surface morphology of the films.
Źródło:
Acta Physica Polonica A; 2017, 131, 3; 417-419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times
Autorzy:
Hojabri, A.
Pourmohammad, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398740.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Tv
81.07.Bc
81.15.cd
Opis:
The zirconia (ZrO₂) is one of the transition-metal oxides with most excellent optical properties which thus attracts great attention in optical engineering. A variety of methods were used for deposition of ZrO₂ thin films on different substrates. In the present work, homogenous, transparent nanocrystalline zirconia thin films were grown by thermal oxidation of zirconium (Zr) thin films deposited on quartz substrate using DC magnetron sputtering technique. The objective of this study is to reveal the effect of thermal oxidation time on structural and optical properties of deposited films. The XRD results revealed the formation of single phase ZrO₂ with tetragonal structure in the films at different thermal oxidation times. The optical constant of ZrO₂ thin films was calculated from the UV-visible transmission spectra. It was found that the increase of thermal oxidation time leads to the increase of transmittance and optical band gap energy of the films. The AFM results showed that thermal oxidation time influences the surface morphology of the films.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 647-649
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Properties of Molybdenum Nanocube Crystals Deposited by Dc Sputtering
Autorzy:
Borghei, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398729.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.07.-b
68.37.Ps
Opis:
Cubic molybdenum (Mo) nanocubes were deposited on a silicon substrate via dc sputtering. This method has been widely used to prepare the thin films containing the crystalline nanostructures. We used this approach to deposition and after that, the characterization of Mo nanocubes. Formation of these cubes was investigated by atomic force microscopy, X-ray diffractometry and four point probes, respectively. First, the mean sizes of the molybdenum cubic nanoparticles were studied under different Mo film thicknesses of 50, 80, 110, and 140 nm. Structural characterizations indicate that the as-deposited Mo nanocubes have different side-length and their distribution over the surface has been measured, separately. In the next step, according to the X-ray diffractometry, Mo crystallites were all along the (110) crystal planes of cubic structure. Finally, electrical characterizations reported that at a deposition power of 54 W, our samples exhibit an electrical resistivity, in the range of 0.92×10¯⁴ Ω cm to 0.58×10¯⁴ Ω cm.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 607-609
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resistance Properties of Al-Si Coatings
Autorzy:
Kucharska, B.
Kowalczyk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398816.pdf
Data publikacji:
2016-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.At
81.07.Bc
81.15.Cd
Opis:
Modern methods for modification of properties and protection of material surface, which embrace gaseous phase physical deposition methods, arouse interest of many branches of industry as well as medicine. By virtue of their fine-grained structure, metallic coatings fabricated by these methods have superior mechanical properties and corrosion resistance when compared with alloys made by traditional techniques. The paper presents a study of the electrical properties and structure of Al-Si coatings. The coatings were deposited by physical vapor deposition. Targets of hypo-, peri- and hypereutectic composition alloys were sputtered using the magnetron process. The coatings were the resistance element in the dc current circuit and measurements were carried out by the four-point method. Based on current-voltage parameters, the coatings electrical resistance was determined at specified temperatures. It was found that an increase of Si content in the chemical composition of the coatings resulted in an increase of their resistance and the maximum temperature to which the coating heats up. By means of a X-ray diffraction the occurrence of thin film of aluminum and silicon oxides on the coatings surface were detected. The oxide film increases resistance of the coatings and hamper measurements at low voltage.
Źródło:
Acta Physica Polonica A; 2016, 129, 2; 197-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Electrochemical Performance of ZnO Films as Anode Materials for Li-Ion Batteries
Autorzy:
Cevher, O.
Cetinkaya, T.
Tocoglu, U.
Guler, M.
Akbulut, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399886.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
82.47.Aa
Opis:
In this work, the effect of rf power on the structural, electrical and electrochemical properties of ZnO thin films was investigated. ZnO thin films were deposited on glass and Cr coated stainless steel substrates by rf magnetron sputtering in pure Ar gas environment. ZnO thin films for different rf powers (75, 100, and 125 W) were deposited keeping all other deposition parameters fixed. ZnO thin films were used as negative electrode materials for lithium-ion batteries, whose charge-discharge properties, cyclic voltammetry and cycle performance were examined. A high initial discharge capacity about 908 mAh g^{-1} was observed at a 0.5 C rate between 0.05 and 2.5 V. The crystallographic structure of the sample was determined by X-ray diffraction. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thickness of the ZnO thin films was measured using a profilometer.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 355-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813498.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
81.05.Ea
81.15.Cd
Opis:
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Structure Densification in $TiO_2$ Coatings Prepared by Magnetron Sputtering under Low Pressure of Oxygen Plasma Discharge
Autorzy:
Domaradzki, J.
Kaczmarek, D.
Prociow, E.
Radzimski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1503889.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.15.-z
68.55.-a
81.15.Aa
Opis:
Current work presents results of studies on structural and optical properties of the $TiO_2$ thin films prepared by reactive magnetron sputtering. Oxide thin films were deposited from metallic targets using oxygen gas only instead of usually used mixture of Ar-$O_2$. Additionally, an increased amplitude of unipolar pulses powering the magnetron has been applied. It is shown that all prepared coatings were stoichiometric and by changing only the discharge voltage it is possible to influence the resulting structural phase and optical properties of prepared thin films. Depending on conditions of magnetron powering, $TiO_2$ thin films had either the anatase structure with refraction index n = 2.1 (λ = 500 nm) or a high temperature stable rutile structure with n = 2.52 (λ = 500 nm).
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 49-52
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanoscopic Investigation of Magnetic Thin Films by Means of Magnetic Force Microscopy Technique
Autorzy:
Sikora, A.
Ozimek, M.
Wilczyński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1398987.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
68.37.Rt
75.70.Kw
Opis:
In the article the results of the research aimed at the recognition of the correlation between the Ni-Fe film thickness and its magnetic domain structures are described. Magnetic thin films were prepared by pulse magnetron sputtering. Obtained thin film thicknesses were in the range of 47.6-326.0 nm. Magnetic domain structures were imaged using magnetic force microscopy. In order to obtain quantitative description of magnetic domains images, the algorithms designed for topography parameters determination were applied, enabling the comparison of specific factors related to the magnetic properties of the samples. Utilized approach provided the analysis of the impact of sputtering parameters on the morphological and magnetic properties of obtained films.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1226-1229
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructured Silicon Thin Film Electrodes for Li-Ion Batteries
Autorzy:
Tocoglu, U.
Cetinkaya, T.
Cevher, O.
Oguz Guler, M.
Akbulut, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399941.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
81.15.Cd
82.47.Aa
Opis:
In this study we produced nanostructured silicon thin films as lithium ion battery electrodes. Films were sputtered onto stainless steel substrates from high purity silicon target via dc magnetron sputtering technique with using different powers. Morphology and crystal structure of films were characterized with the use of scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy analysis, respectively. The thickness of films was measured by using surface profiler. Coin type test cells were assembled in argon filled glove box. Electrochemical performance of cells was tested on an electrochemical analyzer using constant current densities over a voltage range of 0.2-2 V.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 380-382
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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