- Tytuł:
- Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity
- Autorzy:
- Kozanecki, A.
- Powiązania:
- https://bibliotekanauki.pl/articles/1929781.pdf
- Data publikacji:
- 1993-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.80.Ih
78.55.-m - Opis:
- Lattice location experiments performed on Yb- and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb$\text{}^{3+}$ has been observed in In compounds. The photoluminescence spectra of Yb$\text{}^{3+}$ reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb$\text{}^{3+}$ photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er$\text{}^{3+}$. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 5; 881-888
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł