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Wyświetlanie 1-5 z 5
Tytuł:
Influence of External Factors on Results of Bushing tanδ and Capacitance Measurements
Autorzy:
Buchacz, J.
Szymanski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1418039.pdf
Data publikacji:
2012-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.37.+q
77.22.Gm
81.70.Ex
84.32.Tt
Opis:
The paper presents influence of external factors on results of bushing dissipation factor tanδ and capacity measurements performed on not energized transformer as well as with operation voltage using on-line method. There are discussed methods and real cases of measurements, with emphasized differences in results interpretation. Conclusions and literature are summarized.
Źródło:
Acta Physica Polonica A; 2012, 122, 5; 900-904
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Internal Barrier Layer Capacitance Effects in Neodymium Copper Tantalate Ceramics
Autorzy:
Szwagierczak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1491313.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.22.-d
81.05.Je
81.20.-n
84.32.Tt
84.37.+q
Opis:
A new perovskite material $Nd_{2//3}CuTa_4O_{12}$ was applied as a naturally formed internal barrier layer capacitor. The powder prepared by solid state synthesis and ball milling was pressed into pellets and sintered at 1180-1220°C. Dielectric properties of ceramic samples were characterized by impedance spectroscopic studies carried out in the temperature range from - 55 to 700C at frequencies 10 Hz ÷ 2 MHz. Two types of the dielectric response were revealed - a high frequency response attributed to grains which occurred at low temperatures, and a low frequency one related to grain boundaries which dominated at higher temperatures. Resistances and capacitances of grains were found to be two orders lower than those of grain boundaries. Two plateaus were observed in the dielectric permittivity versus frequency plots - a low frequency step corresponding to a high value of $10^4$ and a high frequency step at a level of 40. Scanning electron microscopy observations and energy dispersive spectroscopy analysis confirmed that $Nd_{2//3}CuTa_4O_{12}$ ceramics were composed of semiconducting grains and insulating oxygen-enriched grain boundaries. The formation of such an electrically heterogeneous system during the one step fabrication process in air leads to spontaneous internal barrier layer capacitance effects responsible for a high and relatively stable dielectric permittivity of the developed material.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 205-207
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructured Iron-Substituted Lithium-Manganese Spinel as an Electrode Material for Hybrid Electrochemical Capacitor
Autorzy:
Lisovsky, R.
Ostafiychuk, B.
Budzulyak, I.
Kotsyubynsky, V.
Boychuk, A.
Rachiy, B.
Powiązania:
https://bibliotekanauki.pl/articles/1030917.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
73.63.Bd
82.45.Yz
82.47.Uv
82.47.Wx
84.32.Tt
Opis:
Structure, morphology and electrochemical properties of iron substituted lithium manganese spinel were investigated. The cyclic capability of obtained materials in aqueous electrolyte was studied. The kinetic characteristics of Li⁺-ions charge-discharge intercalation were determined.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 876-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of annealing on the relaxation processes in Pt/SrTiO₃/Pt thin film capacitors
Autorzy:
Ouajji, H.
Raouadi, K.
Yangui, B.
Guillan, J.
Powiązania:
https://bibliotekanauki.pl/articles/1157994.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.32.Tt
84.37.+q
81.15.Cd
73.61.-r
77.22.Gm
76.60.Es
Opis:
In this paper, the effect of the post-annealing on the dielectric properties of SrTiO₃ thin films (200 nm) grown by ion beam sputtering has been investigated. The measured dielectric constant dramatically increased after the post-annealing which is a consequence of the formation of the perovskite phase. A low frequency relaxation mechanism is clearly identified in the amorphous state of this material. Once crystallized, a second relaxation mechanism of lower amplitude is detected at high frequencies and for high measuring temperature. It is assumed that this second relaxation process is related to the space charges bound at the grain boundaries, whereas the first one was assigned to the thermally activated motions of the ionized oxygen vacancies and interfacial polarization under alternating field.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 791-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hall Effect in ZnO Extrinsic Structure
Autorzy:
Dolník, B.
Kurimský, J.
Marton, K.
Kolcun, M.
Tomčo, L.
Briančin, J.
Fabián, M.
Halama, M.
Vojtko, M.
Rajňák, M.
Powiązania:
https://bibliotekanauki.pl/articles/1200027.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Dq
72.20.My
84.32.Ff
84.37.+q
81.05.Xj
72.80.Ng
Opis:
Zinc oxide-based extrinsic composite was investigated. The sample was selected from a series of components of one production batch, prepared by standard sintering technology. The content of extrinsic elements in ZnO base was determined by SEM. Van der Pauw method with four-point electrode fixture was used for study of conducting phenomena in square-shaped sample. It is normaly preferred to assume the symmetric uniformity of the electrical properties of sample, for which sheet resistance, bulk resistivity and Hall mobility, sheet carrier density and carrier concentration can be calculated. When the uniformity of measured parameters is breached, the anisotropy in the arrangement of the internal structure may be the cause. There remains the question of whether the extrinsic ZnO material can be isotropic, regarding the electrical conductivity. Although the Hall effect has been measured, preliminary measurements indicate the presence of anisotropy in the measured samples. Before measurement the following phenomena should be taken into account: magneto-electric effect, photo-electric effect and the isothermal condition should be preserved. Paper discusses the uniformity deviations for the defined setup configurations for positive and negative magnetic field directions. Bulk resistivity has been calculated by numerical solution of van der Pauw equation. Large offset voltage during the measurement is discussed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 76-77
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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