- Tytuł:
- Self-Induced Persistent Photoconductivity in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions
- Autorzy:
-
Van Khoi, Le
Dobrowolski, W.
Zakrzewski, A.
Dobaczewski, L.
Gałązka, R. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1952039.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.25.Tn
78.20.Ls
72.80.Ga - Opis:
- At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V$\text{}^{m}$. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$ Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions can be caused by the bistable nature of the In dopant in the Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn$\text{}_{x}$Cd$\text{}_{1-x}$Te and Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 883-886
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł