Autor: Whall, T. E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: SiGe field effect transistors - performance and applications
Autorzy:: Whall, T.E.
Parker, E.H.C.
Powiązania:: https://bibliotekanauki.pl/articles/307664.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
FETs
epitaxy
circuits
Opis:: Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 3-11
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Low frequency noise in Si and Si/SiGe/Si PMOSFETs
Autorzy:: Thomas, S. M.
Prest, M. J.
Fulgoni, D. J. F.
Bacon, A. R.
Grasby, T. J.
Leadley, D. R.
Parker, E. H. C.
Whall, T. E.
Powiązania:: https://bibliotekanauki.pl/articles/308779.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electronic noise
silicon-germanium heterostructures
MOSFET
dynamic threshold mode
Opis:: Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 2; 64-68
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:: Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:: https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:: Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
Autorzy:: Sadeghzadeh, M. A.
Mironov, O. A.
Emeleus, C. J.
Parry, C. P.
Phillips, P. J.
Parker, E. H. C.
Whall, T. A.
Powiązania:: https://bibliotekanauki.pl/articles/1992074.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Fz
Opis:: We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 503-508
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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