- Tytuł:
- Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
- Autorzy:
-
Suproniuk, M.
Kamiński, P.
Kozłowski, R.
Pawłowski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1364028.pdf
- Data publikacji:
- 2014-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.40.+w
71.55.-i
72.20.-i - Opis:
- A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 4; 1042-1048
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł