- Tytuł:
- Cost-effective titania layers over 100 nm thick : effect of annealing on the structural, morphological, and optical properties
- Autorzy:
-
Zięba, Magdalena
Tyszkiewicz, Cuma
Gondek, Ewa
Wojtasik, Katarzyna
Nizioł, Jacek
Dorosz, Dominik
Starzyk, Bartłomiej
Szymczak, Patryk
Pakieła, Wojciech
Rogoziński, Roman
Karasiński, Paweł - Powiązania:
- https://bibliotekanauki.pl/articles/27315694.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
sol-gel
titania layer
dip-coating
surface roughness
optical properties - Opis:
- Titania dioxide (TiO₂) layers were synthesized via the acid-catalysed sol-gel route using titania (IV) ethoxide, and then annealed at temperatures varying in the range of 150-700 °C. The research concerned the effect of annealing temperature on the structure of TiO₂ layers, their surface morphology, and their optical properties. Further, X-ray diffractometry, and Raman spectroscopy were used to determine the structure of TiO₂ layers. Scanning electron and atomic force microscopy were used to study the surface morphology of TiO₂ layers. Transmittance, reflectance, absorption edge, and optical homogeneity were investigated by UV-VIS spectrophotometry, while the refractive index and thicknesses of TiO₂ layers were measured using a monochromatic ellipsometer. Chromatic dispersion characteristics of the complex refractive index were determined using spectroscopic ellipsometry. Structural studies have shown that the TiO₂ layers annealed at temperatures up to 300 °C are amorphous, while those annealed at temperatures exceeding 300 °C are polycrystalline containing only anatase nanocrystals with sizes increasing from 6 to 20 nm with the increase of the annealing temperature. Investigations on the surface morphology of TiO₂ layers have shown that the surface roughness increases with the increase in annealing temperature. Spectrophotometric investigations have shown that TiO₂ layers are homogeneous and the width of the indirect optical band gap varies with annealing temperature from 3.53 eV to 3.73 eV.
- Źródło:
-
Opto-Electronics Review; 2023, 31, 4; art. no. e147913
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł