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Wyszukujesz frazę "Nowakowski, Mateusz" wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Simplified diagnostics of drive systems in the operation of railway vehicles
Autorzy:
Nowakowski, Tomasz
Motyl, Mateusz
Babiak, Artur
Powiązania:
https://bibliotekanauki.pl/articles/215355.pdf
Data publikacji:
2019
Wydawca:
Instytut Kolejnictwa
Tematy:
diagnostics
rail vehicle
vibrations
drive system
Opis:
A special case of rail vehicle failures, often related to maintenance levels with partial disassembly of components, include damage to the drive system components, which is only manifested during driving. These cases are difficult to detect with standard stationary methods. The use of selection methods or diagnostic advanced for the location and identification of these failures can contribute to a significant increase in the service cost, which measurably affect the overall cost of vehicle operation. In such a case, it becomes necessary to minimize them, by determining only the degree of disruption to the functioning of individual elements of the vehicle’s propulsion system. This will allow for locating the area of damage and take further service decisions. This article presents the results of the test implementation of a simplified control diagnostics of drive systems in the operation of a selected type of rail vehicle. The results of experimental studies based on vibration measurements of drive system components are presented. Based on them, it is possible to develop standard indicators of disturbance of the vehicle’s propulsion system components for use in rolling stock control diagnostics.
Źródło:
Problemy Kolejnictwa; 2019, 182; 147-152
0552-2145
2544-9451
Pojawia się w:
Problemy Kolejnictwa
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
Autorzy:
Hajdel, Mateusz
Muzioł, Grzegorz
Nowakowski-Szkudlarek, Krzesimir
Siekacz, Marcin
Wolny, Paweł
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173219.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
InGaN
laser diode
waveguide
injection efficiency
Opis:
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
Źródło:
Optica Applicata; 2020, 50, 2; 311-321
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
Autorzy:
Nowakowski-Szkudlarek, Krzesimir
Muziol, Grzegorz
Żak, Mikolaj
Hajdel, Mateusz
Siekacz, Marcin
Feduniewicz-Żmuda, Anna
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173471.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
gallium nitride
molecular beam epitaxy
contacts
Opis:
We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.
Źródło:
Optica Applicata; 2020, 50, 2; 323-330
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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