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Wyszukujesz frazę "Kolkovsky, V." wg kryterium: Autor

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum Wells
    Autorzy:
    Kolkovsky, V.
    Wojciechowski, T.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811945.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.80.-e
    77.80.Fm
    85.50.Gk
    73.61.Ga
    Opis:
    In this work, we observed effects of changing the electron concentration and electron mobility upon the poling of the $Cd_{0.96}Zn_{0.04}Te$ ferroelectric gate deposited on the top of the CdTe-based modulation doped quantum well structure, which are confirmation of the existence of the electrostatic field originating from the ferroelectric material, which can be controlled by an external voltage. The analysis of the data obtained from the Hall effect measurements showed that the electron mobility and carrier concentration decreased by a factor of 2.5 and 1.5, respectively upon the negative poling of the gate with respect to the poled by the positive voltage. Moreover, the electrostatic field, depending on its directions, causes depletion of accumulation of electrons in the 2D channel, i.e., it is a source of the field effect.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1173-1178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Native Deep-Level Defects in MBE-Grown p-Type CdTe
    Autorzy:
    Olender, K.
    Wosiński, T.
    Mąkosa, A.
    Dłużewski, P.
    Kolkovsky, V.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492964.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    68.37.Lp
    61.72.J-
    61.72.Lk
    Opis:
    Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 946-949
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells
    Autorzy:
    Chusnutdinow, S.
    Pietruszka, R.
    Zaleszczyk, W.
    Makhniy, V.
    Wiater, M.
    Kolkovsky, V.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375701.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    73.61.Ga
    85.60.Dw
    88.40.jm
    Opis:
    We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, $J_{SC}$, by almost 60% and of the energy conversion efficiency by 44%.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1072-1075
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
    Autorzy:
    Aleszkiewicz, P.
    Wojciechowski, T.
    Fronc, K.
    Kolkovsky, V.
    Janik, E.
    Jakieła, R.
    Mycielski, A.
    Karczewski, G.
    Aleszkiewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811911.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    73.61.Ga
    77.90.+k
    Opis:
    In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1041-1047
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO
    Autorzy:
    Gas, K.
    Janik, E.
    Zaleszczyk, W.
    Pasternak, I.
    Dynowska, E.
    Fronc, K.
    Kolkovsky, V.
    Kret, S.
    Morhange, J. F.
    Reszka, A.
    Wiater, M.
    Caliebe, W.
    Karczewski, G.
    Kowalski, B. J.
    Szuszkiewicz, W.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047950.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Hk
    68.37.Lp
    68.65.La
    81.07.Vb
    Opis:
    We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 612-614
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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