- Tytuł:
- Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires
- Autorzy:
-
Straub, H.
Brunthaler, G.
Faschinger, W.
Bauer, G.
Vieu, C. - Powiązania:
- https://bibliotekanauki.pl/articles/1952705.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 78.55.Et
- Opis:
- Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se/ZnSe quantum well were fabricated by a CH$\text{}_{4}$/H$\text{}_{2}$ reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd$\text{}_{0.2}$Zn$\text{}_{0.8}$Se quantum well after the patterning process.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 1085-1089
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł