Wszystkie pola: ionization current - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Autorzy:: Tomaszewski, D.
Łukasiak, L.
Gibki, J.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308410.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance
Opis:: An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 57-60
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection
Autorzy:: Nazarov, A.N.
Houk, Y.
Kilchytska, V.I.
Powiązania:: https://bibliotekanauki.pl/articles/308027.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: Fowler-Nordheim current
trap-assisted tunneling
silicon-on-insulator
buried oxide
SIMOX
UNIBOND
anode hole injection
band-to-band impact ionization
Opis:: Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the film or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400° C. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 50-61
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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