Wszystkie pola: Dmochowski, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs
Autorzy:: Dmochowski, J. E.
Wang, P. D.
Stradling, R. A.
Powiązania:: https://bibliotekanauki.pl/articles/1888152.pdf
Data publikacji:: 1991-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
78.50.Ge
Opis:: The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
Źródło:: Acta Physica Polonica A; 1991, 80, 2; 279-282
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Pressure Induced Shallow-Deep A$\text{}_{1}$ Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment
Autorzy:: Dmochowski, J. E.
Stradling, R. A.
Sly, J.
Dunstan, D. J.
Prins, A. D.
Adams, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1876148.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
Opis:: Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A$\text{}_{1}$ transition for Sn donors in highly Sn doped n-type (≈ 10$\text{}^{18}$ cm$\text{}^{-3}$) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 457-460
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell
Autorzy:: Dmochowski, J.
Stradling, R.
Prins, A.
Dunstan, D.
Adams, A.
Kukimoto, H.
Powiązania:: https://bibliotekanauki.pl/articles/1861544.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
Opis:: The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 649-652
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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