- Tytuł:
- Low Leakage and Robust Sub-threshold SRAM Cell Using Memristor
- Autorzy:
-
Mustaqueem, Zeba
Ansari, Abdul Quaiyum
Akram, Md Waseem - Powiązania:
- https://bibliotekanauki.pl/articles/2200681.pdf
- Data publikacji:
- 2022
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
6T SRAM cell
memristor
power dissipation
read and write operation
leakage current
stability
non-volatile circuit - Opis:
- This work aims to improve the total power dissipation, leakage currents and stability without disturbing the logic state of SRAM cell with concept called sub-threshold operation. Though, sub-threshold SRAM proves to be advantageous but fails with basic 6T SRAM cell during readability and writability. In this paper we have investigated a non-volatile 6T2M (6 Transistors & 2 Memristors) sub-threshold SRAM cell working at lower supply voltage of VDD=0.3V, where Memristor is used to store the information even at power failures and restores previous data with successful read and write operation overcomes the challenge faced. This paper also proposes a new configuration of non-volatile 6T2M (6 Transistors & 2 Memristors) subthreshold SRAM cell resulting in improved behaviour in terms of power, stability and leakage current where read and write power has improved by 40% and 90% respectively when compared to 6T2M (conventional) SRAM cell. The proposed 6T2M SRAM cell offers good stability of RSNM=65mV and WSNM=93mV which is much improved at low voltage when compared to conventional basic 6T SRAM cell, and improved leakage current of 4.92nA is achieved as compared.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2022, 68, 4; 667--676
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł