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Wyszukujesz frazę "pulse methods" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
The influence of environment on condition of location damage in screen of the coaxial cable
Autorzy:
Tarczyński, W.
Powiązania:
https://bibliotekanauki.pl/articles/97499.pdf
Data publikacji:
2013
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
damage of cable shield
surround of cable
fault localization
pulse methods
Opis:
This paper presents the results of laboratory tests of influence of the environment on pulses propagation conditions in the screen of coaxial cable. The reference level for the screen is the environment, which in real maintenance conditions, is the soil or it could be the inner work conductor. The objective of this work is to determine the possibility of using the pulse method for fault location of screen isolation of electric power cable line or telecommunication line. The special measurement system is described, which allows taking measurements of the influence of different substances types, which surround the location of damage, on the propagation of testing pulses. The results of measurements are shown in oscillograms obtained for typical substances which surround the cable in real exploitation conditions.
Źródło:
Computer Applications in Electrical Engineering; 2013, 11; 199-208
1508-4248
Pojawia się w:
Computer Applications in Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices
Autorzy:
Piskorski, K.
Przewłocki, H. M.
Powiązania:
https://bibliotekanauki.pl/articles/308206.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
flat-band voltage
light pulse technique
MOS system
photoelectric methods
scanned light pulse technique
Opis:
The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating the MOS structure with a semitransparent metal gate by a UV light beam, are often competitive for typical electric measurements. The results obtained by different photoelectric methods are, in many cases, more accurate and reproducible than the results of other measurements. The flat-band voltage VFB is an important parameter of any MOS structure since its value influences the threshold voltage VT , which decides for example about power consumption of MOS transistors. One of the methods to measure the VFB value is the electric method of C(V) characteristic. This method involves certain calculations and requires the knowledge about parameters of the investigated sample. The accuracy of this method is rarely better than š100 mV (for higher doping of the substrates the accuracy is worse). The other method of VFB value determination, outlined in this article, is the photoelectric light pulse technique (LPT) method. This method based on the idea proposed by Yun is currently being optimized and verified experimentally.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 4; 76-82
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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