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    Wyświetlanie 1-3 z 3
    Tytuł:
    Sub-Terahertz Emission from Field-Effect Transistors
    Autorzy:
    Yavorskiy, D.
    Karpierz, K.
    Kopyt, P.
    Grynberg, M.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033125.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    Field-effect transistors
    THz emission
    Opis:
    Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 335-337
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transistor Effect in the Cochlear Amplifier
    Autorzy:
    Kiełczyński, P.
    Szalewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/178149.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    cochlear amplifier
    acoustoelectric transducers
    electromechanical transistor
    equivalent circuits
    field effect transistors
    ion current
    Opis:
    The paper presents a new electromechanical amplifying device i.e., an electromechanical biological transistor. This device is located in the outer hair cell (OHC), and constitutes a part of the Cochlear amplifier. The physical principle of operation of this new amplifying device is based on the phenomenon of forward mechanoelectrical transduction that occurs in the OHC’s stereocilia. Operation of this device is similar to that of classical electronic Field Effect Transistor (FET). In the considered electromechanical transistor the input signal is a mechanical (acoustic) signal. Whereas the output signal is an electric signal. It has been shown that the proposed electromechanical transistor can play a role of the active electromechanical controlled element that has the ability to amplify the power of input AC signals. The power required to amplify the input signals is extracted from a battery of DC voltage. In the considered electromechanical transistor, that operates in the amplifier circuit, mechanical input signal controls the flow of electric energy in the output circuit, from a battery of DC voltage to the load resistance. Small signal equivalent electrical circuit of the electromechanical transistor is developed. Numerical values of the electrical parameters of the equivalent circuit were evaluated. The range, which covers the levels of input signals (force and velocity) and output signals (voltage, current) was determined. The obtained data are consistent with physiological data. Exemplary numerical values of currents, voltages, forces, vibrational velocities and power gain (for the assumed input power levels below 1 picowatt (〖10〗^(-12) W), were given. This new electromechanical active device (transistor) can be responsible for power amplification in the cochlear amplifier in the inner ear.
    Źródło:
    Archives of Acoustics; 2014, 39, 1; 117-124
    0137-5075
    Pojawia się w:
    Archives of Acoustics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    FET input voltage amplifier for low frequency noise measurements
    Autorzy:
    Achtenberg, Krzysztof
    Mikołajczyk, Janusz
    Bielecki, Zbigniew
    Powiązania:
    https://bibliotekanauki.pl/articles/221854.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    low noise amplifier
    low frequency noise measurements
    field effect transistors
    FET voltage noise
    FET input amplifier
    Opis:
    The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp trans impedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√Hz, 3 nV/√Hz, 0.95 nV/√Hz and 0.6 nV/√Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A -3dB frequency response is from ~20 mHz to ~600 kHz.
    Źródło:
    Metrology and Measurement Systems; 2020, 27, 3; 531-540
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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