Temat: 81.16.Ta - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Nonexistence of the Classical Trajectories in the Stern-Gerlach Experiment
Autorzy:: Arsenijević, M.
Dugić, M.
Powiązania:: https://bibliotekanauki.pl/articles/1537871.pdf
Data publikacji:: 2010-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 03.65.Ta
03.65.Yz
81.16.Ta
Opis:: The Stern-Gerlach experiment is a paradigm of the quantum measurement of spin. Its physical interpretation is in intimate relation with the physical basis of the current research in the atomic (molecular) nanofabrication procedures. Nevertheless, interpretation of the experiment is an open issue yet. Here, we give the arguments for the physical nonexistence of the so-called classical trajectories of the atoms (molecules) in front of the screen. Some nanotech-related consequences are distinguished.
Źródło:: Acta Physica Polonica A; 2010, 117, 5; 760-763
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:: Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:: https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:: We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja