Temat: 63.20.dd - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Relative Reflection Difference as a Method for Measuring the Thickness of the Exfoliated MoSe₂ Layers
Autorzy:: Łempicka, K.
Norowski, K.
Grzeszczyk, M.
Król, M.
Lekenta, K.
Babiński, A.
Piętka, B.
Szczytko, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033778.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.20.dd
78.20.Ci
78.30.-j
78.66.Li
Opis:: We propose a method for measuring the thickness of the exfoliated MoSe₂ layers deposited on Si/SiO₂ substrate, based on the reflectance measurements performed with laser light illumination at two different wavelengths: red and green from confocal microscope at room temperature. We demonstrate the correlation between the number of layers in a flake and the value of its relative reflection difference. We applied the transfer matrix method to calculate the reflectivity and verify our experimental results. The approach proposed by us allows for fast and automatic verification of the exfoliated MoSe₂ layers thickness on large areas of the substrate.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 316-318
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Methods and Ways of Piezoelectric Accelerometers Fastening on the Objects of Research
Autorzy:: Korobiichuk, I.
Bezvesilna, O.
Kachniarz, M.
Koshovyj, M.
Kvasnikov, V.
Powiązania:: https://bibliotekanauki.pl/articles/1030986.pdf
Data publikacji:: 2018-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.F-
62.30.+d
63.20.dd
77.65.Fs
Opis:: Methods and ways of piezoelectric measuring converters fastening on the objects of research are considered in the article. Piezoelectric accelerometers are sensors of a contact type, they have a mechanical contact with the object of research. The peculiarity of such connection is the fact that the object immediately has an influence on the output signal of the accelerometer. Therefore, study of methods and ways of piezoelectric accelerometers fastening on the objects of research is, undoubtedly, topical. Their advantages and disadvantages are specified. Recommendations about the choice of the way of piezoelectric measuring converters fastening on the objects of research depending on the operating conditions are made.
Źródło:: Acta Physica Polonica A; 2018, 133, 4; 1112-1115
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Confocal Microscope Studies of $MoS_{2}$ Layer Thickness
Autorzy:: Grzeszczyk, M.
Gołasa, K.
Piętka, B.
Babiński, A.
Szczytko, J.
Powiązania:: https://bibliotekanauki.pl/articles/1377207.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ci
63.20.dd
78.30.-j
78.66.Li
Opis:: We have been studying micro-luminescence of various exfoliated $MoS_{2}$ flakes using a confocal microscope. A crucial issue is to determine thickness of the investigated layer. The common way - using atomic force microscopy, electron microscopy or the Raman spectroscopy - requires moving the sample out from the confocal microscope experimental setup and looking for a particular exfoliated flake hidden among thousands of others. In order to preliminarily determine thickness of investigated layers we have performed a study on optical reflectivity and compared the results with the Raman spectroscopy investigations. In this way we were able to calibrate our experimental setup. Optical measurements are much faster than the Raman spectroscopy and can give a good estimation of $MoS_{2}$ thickness.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1207-1208
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
Autorzy:: Grodecki, K.
Drabińska, A.
Bożek, R.
Wysmołek, A.
Korona, K.
Strupiński, W.
Borysiuk, J.
Stępniewski, R.
Baranowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791292.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Tr
78.40.Ri
78.30.Na
63.20.dd
63.20.kd
Opis:: Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 835-837
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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