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Wyszukujesz frazę "Yakuphanoğlu, F." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Electronic and Photovoltaic Properties of p-Si/PCBM:MEH-PPV Organic-Inorganic Hybrid Photodiode
    Autorzy:
    Yakuphanoglu, F.
    Farooq, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505178.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Kk
    88.40.jr
    Opis:
    The photovoltaic and electronic properties of p-Si/poly[2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV):[6, 6]-phenyl $C_{61}$-butyric acid methyl ester (PCBM) organic-inorganic device have been investigated. The current-voltage characteristic of p-Si/PCBM:MEH-PPV photodiode includes series resistance effect and the diode indicates a non-ideal behavior. The photovoltaic effect in p-Si/PCBM:MEH-PPV photodiode is based on the formation of excitons and subsequent dissociation and charge collection at the electrodes. It is evaluated that p-Si/PCBM:MEH-PPV device is a photodiode with $V_{oc}$ of 84 mV and $I_{sc}$ of 3.47 nA electronic parameters.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 890-894
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of La Dopant on Nanocluster Size and Optical Band Gap of CdO Films Prepared by Sol-Gel Method
    Autorzy:
    Alahmed, Z.
    Serbetçi, Z.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400492.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.67.-n
    81.20.Fw
    Opis:
    The undoped and lanthanum doped cadmium oxide thin films were prepared by sol-gel method. The CdO films were doped with various percentages of La, 0.1, 0.5, 1, and 2 at.%. We have investigated the structural properties of the CdO films by atomic force microscopy. The obtained results show that both the grain size and the surface roughness of CdO films reduce with increase of La doping content. Additionally, the result shows a significant decrease of the transmittance in the range of 300 to 500 nm with increase of La doping level. The optical band gap of CdO films increases with La doped CdO films. It was found that the band gaps to be 2.25, 2.36, 2.4, 2.28, and 2.31 eV for La contents with 0.1, 0.5, 1, and 2 at.% doped CdO, respectively.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 125-127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier
    Autorzy:
    Yakuphanoglu, F.
    Shah, M.
    Aslam Farooq, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493722.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Pr
    78.40.Me
    Opis:
    The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be $7.64 × 10^{10} cm^{-2} eV^{-1}$. The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 558-562
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Controlling of Transformation Temperatures of Cu-Al-Mn Shape Memory Alloys by Chemical Composition
    Autorzy:
    Aksu Canbay, C.
    Karagoz, Z.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365092.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.fg
    65.40.-b
    Opis:
    The Cu-Al-Mn shape memory alloys having various chemical compositions were prepared by arc melting method to control the phase transformation parameters. The phase transformation parameters and structural properties of the alloys were investigated by differential scanning calorimetry and optic microscopy, respectively. The effects of the chemical composition on characteristic transformation temperatures, enthalpy and entropy values of Cu-Al-Mn ternary system were investigated. The characteristic transformation temperatures of austenite and martensite phase ($A_{s}$, $A_{f}$, $M_{s}$, and $M_{f}$) are increased with change in the chemical composition of the alloys. The average crystallite size for the alloys was calculated to determine the effect of aluminum and manganese compositions on the transformation temperatures. The change in transformation temperatures indicates the same trend with change in crystallite size. The obtained results suggest that the phase transformation parameters of the Cu-Al-Mn alloys can be controlled by Al and Mn contents.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1163-1166
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal and Electrical Properties of Carbon Nanotube Based Materials
    Autorzy:
    Yuca, N.
    Karatepe, N.
    Yakuphanoğlu, F.
    Gürsel, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399884.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.U-
    Opis:
    In this study, carbon nanotubes were synthesized at temperatures of 500C and 800C by the fluidized-bed chemical vapor deposition method. The synthesized material was purified by using 3 M HCl at 75°C, 15 h. After synthesis and purification, the polyaniline-doped $H_3BO_3$ and $BF_3$ and composites were prepared by coagulation method. Transmission electron microscope and Fourier transform infrared spectroscopy were used to characterize the carbon nanotubes and their composites. Thermal stabilities were measured by thermogravimetry and differential scanning calorimetry instruments. The thermogravimetry and derivative thermogravimetry curves indicated that the thermal stability of polyaniline-doped $H_3BO_3$ and $BF_3$ increased with carbon nanotube doping. The electrical properties of carbon nanotubes and their composites were also determined. The obtained electrical conductivity values of the nanocomposites including the polyaniline-doped $H_3BO_3$ and $BF_3$ were typical for organic semiconductor materials. It can be evaluated that the electrical properties of the polyaniline based polymers can be controlled by carbon nanotube doping.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 352-354
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impedance Spectroscopy of Nanostructure $p-ZnGa_{2}Se_{4}//n-Si$ Heterojunction Diode
    Autorzy:
    Yahia, I.
    Fadel, M.
    Sakr, G.
    Shenouda, S.
    Yakuphanoglu, F.
    Farooq, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493723.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.37.+q
    87.63.Pn
    Opis:
    The impedance characteristics of the nanostructure $p-ZnGa_2Se_4//n-Si$ heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz-5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 563-566
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Controlling of Optical Band Gap of Allyl Diglycol Carbonate Polymer with Ultraviolet Laser Radiation
    Autorzy:
    Farooq, W.
    Baig, M.
    Fatehmulla, A.
    Al-Salhi, M.
    Al-Ghamdi, S.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400395.pdf
    Data publikacji:
    2013-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    61.82.Pv
    61.80.Ba
    Opis:
    The effects of ultraviolet laser radiation on the structure and optical properties of allyl diglycol carbonate have been investigated. The allyl diglycol carbonate samples were irradiated with 266 nm with different power densities from Nd:YAG laser. The bulk etch rate enhancement and enlargement of track diameter clearly indicate that allyl diglycol carbonate is significantly affected by UV laser. The laser-irradiated allyl diglycol carbonate samples showed a decrease in the optical band gap with increasing laser power density. The obtained results indicate that the optical band gap of the alpha irradiated polymer is varied from 4.10 eV to 2.65 eV by UV laser irradiation.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 1; 106-110
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improvement of Efficiency in CdS Quantum Dots Sensitized Solar Cells
    Autorzy:
    Wageh, S.
    Al-Ghamdi, A.
    Soylu, M.
    Al-Turki, Y.
    El Shirbeeny, W.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399329.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.35.Be
    88.40.hj
    72.80.Vp
    68.47.Gh
    Opis:
    CdS quantum dots were coated on $TiO_2$ layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density $J_{SC}$ was found to be approximately 6.01 $mA//cm^2$ for graphene oxide-incorporated $CdS//TiO_2$ solar cell, while the $J_{SC}$ of only CdS-sensitized solar cells was lower than 4.40 $mA//cm^2$. The efficiency of the $CdS//TiO_2$ solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the $CdS//TiO_2$ solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated $TiO_2$ was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 750-754
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
    Autorzy:
    Al-Ghamdi, A.
    Al-Hartomy, O.
    Gupta, R.
    El-Tantawy, F.
    Taskan, E.
    Hasar, H.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1489876.pdf
    Data publikacji:
    2012-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Jn
    81.05.Fb
    73.30.+y
    Opis:
    We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 3; 673-677
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of Optical Constants of Nanocluster CdO Thin Films Deposited by Sol-Gel Technique
    Autorzy:
    Serbetci, Z.
    Gunduz, B.
    Al-Ghamdi, A.
    Al-Hazmic, F.
    Arık, K.
    El-Tantawy, F.
    Yakuphanoglu, F.
    Farooq, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205426.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Bf
    78.20.Ci
    81.20.Fw
    Opis:
    The optical properties of the CdO and Pt doped CdO thin films synthesized by sol-gel technique were investigated. The lowest grain size value (81.34 nm) was found to be for CdO thin film. The Pt doped CdO films are transformed to clusters with nanoparticles. The transparency properties of the CdO thin film is changed with Pt doping. The plots of refractive index indicate abnormal and normal dispersion regions. The refractive index values of the CdO thin film are changed with Pt doping. The direct optical band gap values of the films were changed with doping of Pt. The film of 0.5% Pt doped CdO indicates the lowest optical band gap value (2.421 eV). The imaginary parts of the optical conductivity of the CdO and Pt doped CdO thin films are higher than that of the real parts of the optical conductivity.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 798-807
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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