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Wyszukujesz frazę "Demchenko, M." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Cobalt Additives Influence on Phase Composition and Defect Structure of Manganese Dioxide Prepared from Fluorine Containing Electrolytes
Autorzy:
Sokolsky, G.
Ivanov, S.
Ivanova, N.
Boldurev, Ye.
Kobulinskaya, O.
Demchenko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1550089.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Fn
61.72.-y
85.40.Ry
Opis:
Manganese dioxide samples were prepared from fluorine containing electrolytes with additives of $Co^{2+}$ ions. Atomic absorption spectroscopy, thermogravimetric analysis, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis were the methods of the samples characterisation. Manganese dioxide at the presence of cobalt forms nanosized ramsdellite structure crystallites of mostly needle-like morphology with significant content of hydroxide groups. The main phase state in manganese dioxide samples obtained at the presence of cobalt is $γ-MnO_{2}$ with ramsdellite structure and low content of intergrowth defects. The sample doped both with lithium and cobalt can be indexed to a hollandite-type structure (tetragonal; space group I4/m) of $α-MnO_{2}$.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 86-90
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Properties and Temperature Behaviour οf Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films
Autorzy:
Kulyk, B.
Figà, V.
Kapustianyk, V.
Panasyuk, M.
Serkiz, R.
Demchenko, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400391.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
78.40.Fy
68.55.ag
Opis:
Silver- and copper-doped ZnO films were prepared by radio-frequency magnetron sputtering on glass substrates. The influence of dopants content on the structural, morphological properties as well as on evolution of the optical absorption edge was considered. It has been found that Ag- and Cu-doped ZnO films are characterized by wurtzite crystalline structure with the preferred direction of crystalline orientation (002). The sizes of grains within the films were found to be dependent on the type of dopant. The temperature evolution of the optical absorption edge is described by the modified Urbach rule that reflects polycrystalline nature of the material. The corresponding parameters concerning electron- (exciton-) phonon interaction, phonon energies and temperature changes of the band-gap were determined and analysed.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 92-97
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Specific Features of Content Dependences for Energy Gap in $In_{x}Tl_{1-x}I$ Solid State Crystalline Alloys
Autorzy:
Kashuba, A.
Piasecki, M.
Bovgyra, O.
Stadnyk, V.
Demchenko, P.
Fedorchuk, A.
Franiv, A.
Andriyevsky, B.
Powiązania:
https://bibliotekanauki.pl/articles/1398249.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
71.20.-b
42.70.Gi
71.35.-y
Opis:
A series of $In_{x}Tl_{1-x}I$ (x=0.4-0.9) single crystalline solid state alloys were successfully synthesized by the vertical Bridgman method. For the first time the density functional theory based band structure calculations are performed and features of the band energy dispersion are discussed. Comparison with the experimental energy gap $E_{g}$ obtained from the optical photoconductivity is discussed. An essential role of the localized defects and excitons in formation of the edge photoconductivity is analyzed. Relation between the crystal structure and photoconductivity of the materials studied is discussed. Also the origin of the principal valence and conduction bands is explored. Experimental measurements of the band gap $E_{g}$ by the optical and photoconductivity methods have given opposite dependences with respect to the indium content x. Features of the photoconductivity spectra for different crystallographic directions have been discussed with taking into account the chemical bonds anisotropy.
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 68-75
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XANES Studies of Mn K and $L_{3,2}$ Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing
Autorzy:
Wolska, A.
Lawniczak-Jablonska, K.
Klepka, M.
Jakieła, R.
Demchenko, I.
Sadowski, J.
Holub-Krappe, E.
Persson, A.
Arvanitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/1812244.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
Opis:
$Ga_{1-x}Mn_xAs$ is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper $Ga_{1-x}Mn_xAs$ samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 357-366
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Eu,Gd)Te - MBE Growth and Characterization
Autorzy:
Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/2038228.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
81.15.Hi
Opis:
Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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