Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Wróbel, Jarosław" wg kryterium: Wszystkie pola

  Lista filtrów

Dostawca treści

Podbaza

Wyrównaj
Wyświetlanie 1-15 z 67
Tytuł:
Semiconductor contact layer characterization in a context of hall effect measurements
Autorzy:
Kowalewski, Andrzej
Wróbel, Jarosław
Boguski, Jacek
Gorczyca, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/220890.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
metal contact
contact layer
contact resistance
Hall effect
resistivity
van der Pauw method
MSM structure
semiconductors’ characterization
Opis:
A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.
Źródło:
Metrology and Measurement Systems; 2019, 26, 1; 109-114
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Baden Culture finds from Goszcza site 1 (Kielnik): new archaeological, anthropological, archaeozoological and archaeobotanical data
Autorzy:
Nowak, Maciej
Wilczyński, Jarosław
Wróbel, Jarosław
Kapcia, Magda
Moskal-del Hoyo, Magdalena
Powiązania:
https://bibliotekanauki.pl/articles/52579363.pdf
Data publikacji:
2019
Wydawca:
Uniwersytet Jagielloński. Wydawnictwo Uniwersytetu Jagiellońskiego
Tematy:
Neolithic
Baden culture
funerary rites
anthropology
archaeozoology
archaeobotany
Opis:
In spring 2019, rescue excavations were conducted at Goszcza 1 (Kielnik) site in connection with construction of a dwelling house. As a result, eleven archaeological features of various chronology were identified. The most abundant materials, dating to the Late Classic period of the Baden culture in Lesser Poland (the end of the 4th millennium and the beginning of the 3th millennium BC), were found in four pits. At the bottom of two features (nos 4 and 6) human skeletons were discovered. In the present study, only materials discovered in features attributed to the Baden culture are discussed, including pottery finds, flint artefacts, and fragments of human and animal bones. Macroscopic plant remains coming from three archaeological features have also been investigated.
Źródło:
Folia Quaternaria; 2019, 87; 27-58
0015-573X
2199-5915
Pojawia się w:
Folia Quaternaria
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis
Autorzy:
Wróbel, Jarosław
Umana-Membreno, Gilberto A.
Boguski, Jacek
Złotnik, Sebastian
Kowalewski, Andrzej
Moszczyński, Paweł
Antoszewski, Jarek
Faraone, Lorenzo
Wróbel, Jerzy
Powiązania:
https://bibliotekanauki.pl/articles/2204210.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
indium arsenide
effective masses
energy band warping
magnetotransport
mobility spectrum analysis
Opis:
Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 μm thick layer of indium arsenide on a semiinsulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20-300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144567
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern
Autorzy:
Boguski, Jacek
Wróbel, Jarosław
Złotnik, Sebastian
Budner, Bogusław
Liszewska, Malwina
Kubiszyn, Łukasz
Michałowski, Paweł P.
Ciura, Łukasz
Moszczyński, Paweł
Odrzywolski, Sebastian
Jankiewicz, Bartłomiej
Wróbel, Jerzy
Powiązania:
https://bibliotekanauki.pl/articles/2204219.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
wafer homogeneity
wafer defect pattern
surface roughness
indium arsenide
beryllium doping
Opis:
The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144564
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Connexin-dependent intercellular stress signaling in tissue homeostasis and tumor development
Autorzy:
Czyż, Jarosław
Piwowarczyk, Katarzyna
Paw, Milena
Luty, Marcin
Wróbel, Tomasz
Catapano, Jessica
Madeja, Zbigniew
Ryszawy, Damian
Powiązania:
https://bibliotekanauki.pl/articles/1038572.pdf
Data publikacji:
2017
Wydawca:
Polskie Towarzystwo Biochemiczne
Tematy:
carcinogenesis
connexin
gap junctions
cellular stress
tumor
Opis:
Cellular stress responses determine tissue development, homeostasis and pathogenesis. Paracrine signaling, exchange of mechanical stimuli and intercellular transfer of small metabolites via connexin-built gap junctional channels are involved in the cellular stress detection and propagation of stress stimuli in multicellular networks. Cellular stress responses are also regulated through the activity of unpaired connexons (hemichannels) and via the intracellular interference of connexins with the cell cycle and pro-apoptotic machinery. Therefore, connexins are considered as multidirectional transmitters of the "outside-in" and "inside-out" stress signaling that are crucial for tissue homeostasis, regeneration and pathology. In particular, the disturbance of connexin function during the multi-stage process of tumor development leads to abnormal reactions of tumor cells to stress stimuli. In this review, we outline the current knowledge on the multidirectional role of connexins in the detection of stress signals. We also discuss the role of connexin-mediated intercellular transmittance of stress signals in tumour promotion, progression and metastatic cascade. Highlights: 1. Connexins and gap junctions protect cells from the microenvironmental stress and are involved in propagation and intracellular processing of stress signals. 2. The quality and quantity of stress stimuli, which may lead to cell adaptation or death by apoptosis, is determined by intrinsic properties of connexins and the cell phenotype. 3. Connexin deficiency increases the resistance of tumor cells to the "outside-in" stress signaling. 4. The connexin-mediated "inside-out" stress signaling participates in tumor cell invasion during the metastatic cascade.
Źródło:
Acta Biochimica Polonica; 2017, 64, 3; 377-389
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 67

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies