Autor: Żukowski, E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Parkhomenko, I.
Mudryi, A.
Wendler, E.
Zukowski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1198877.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:: Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1288-1291
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification
Autorzy:: Fedotova, J.
Ivanou, D.
Mazanik, A.
Svito, I.
Streltsov, E.
Saad, A.
Zukowski, P.
Fedotov, A.
Bury, P.
Apel, P.
Powiązania:: https://bibliotekanauki.pl/articles/1402223.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.Km
81.15.Jj
75.47.De
Opis:: In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 894-896
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "Żukowski, E." wg kryterium: Autor

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język