Temat: 78.66.Fd - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:: Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:: https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.55.Cr
Opis:: The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:: Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.55.Cr
Opis:: It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Carriers Diffusion in GaAs/AlAs Type II Quantum Well
Autorzy:: Lesiak, A.
Chwalisz, B.
Wysmołek, A.
Potemski, M.
Stępniewski, R.
Thierry-Mieg, V.
Powiązania:: https://bibliotekanauki.pl/articles/2044497.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
Opis:: The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 755-760
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Control of Photon Polarization in GaAs/AlAs Single Quantum Dot Emission
Autorzy:: Suffczyński, J.
Trajnerowicz, A.
Kazimierczuk, T.
Piętka, B.
Kowalik, K.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Gaj, J. A.
Wysmołek, A.
Stępniewski, R.
Potemski, M.
Thierry-Mieg, V.
Powiązania:: https://bibliotekanauki.pl/articles/2047725.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
78.47.+p
Opis:: We study polarization resolved correlation between photons emitted in cascaded biexciton-exciton recombination from a single quantum dot formed in type II GaAs/AlAs bilayer. Magnetic field induced transition from anisotropy controlled to the Zeeman controlled emission was demonstrated by a circular polarization correlation between the emitted photons. A simple model describing the effect allowed us to determine the anisotropic exchange splitting of the excitonic state. This method of the anisotropic exchange splitting determination can be useful in the case when other methods are not sensitive enough.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 461-466
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:: Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:: We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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